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Diodes - Rectifiers - Single

Records 584
Page  9/20
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
Infineon Technologies
SIC DIODES
Package: -
Stock7,920
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 600V TO220-2
Package: -
Stock6,352
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock28,482
TO-236-3, SC-59, SOT-23-3
-
Standard
50V
250mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-65°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock330,786
TO-236-3, SC-59, SOT-23-3
-
Standard
80V
250mA (DC)
1.25V @ 150mA
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
DIODE GEN PURP 650V 40A TO220-2
Package: TO-220-2
Stock15,912
TO-220-2
-
Standard
650V
40A
2.3V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 1.2KV 7.5A TO247
Package: TO-247-3 Variant
Stock2,464
TO-247-3 Variant
thinQ!?
Silicon Carbide Schottky
1200V
7.5A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
180µA @ 1200V
375pF @ 1V, 1MHz
Through Hole
TO-247-3 Variant
PG-TO247HC-3
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 9A TO263-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5,984
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
650V
9A (DC)
1.8V @ 9A
No Recovery Time > 500mA (Io)
0ns
1.6mA @ 650V
270pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 5A DIE
Package: Die
Stock6,144
Die
-
Standard
1200V
5A
2.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
96ns
100nA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
Infineon Technologies
IC DIODE EMITTER CTLR WAFER
Package: -
Stock3,152
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 600V 45A WAFER
Package: Die
Stock2,100
Die
-
Standard
600V
45A (DC)
1.6V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock18,654
TO-252-3, DPak (2 Leads + Tab), SC-63
thinQ!?
Silicon Carbide Schottky
600V
3A (DC)
2.3V @ 3A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 8A TO220AC
Package: TO-220-2
Stock375,168
TO-220-2
HEXFRED?
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
5µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 2A VSON-4
Package: 4-PowerTSFN
Stock4,816
4-PowerTSFN
thinQ!?
Silicon Carbide Schottky
650V
2A (DC)
1.7V @ 2A
No Recovery Time > 500mA (Io)
0ns
35µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 40V 750MA SOD323
Package: SC-76, SOD-323
Stock286,830
SC-76, SOD-323
-
Schottky
40V
750mA (DC)
740mV @ 750mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 40V
12pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
Infineon Technologies
DIODE GEN PURP 600V 14.7A TO220
Package: TO-220-2
Stock143,376
TO-220-2
-
Standard
600V
14.7A (DC)
2V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO220
Package: TO-220-2
Stock4,048
TO-220-2
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 1200V 10A TO220-2
Package: TO-220-2
Stock3,216
TO-220-2
thinQ!?
Silicon Carbide Schottky
1200V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
240µA @ 1200V
500pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO220-2
Package: TO-220-2
Stock5,472
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
20A (DC)
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
210µA @ 650V
590pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 10V 3A SOD323-2
Package: SC-76, SOD-323
Stock2,560
SC-76, SOD-323
-
Schottky
10V
3A (DC)
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 8V
30pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
Infineon Technologies
DIODE GEN PURP 1.7KV 150A WAFER
Package: Die
Stock3,536
Die
-
Standard
1700V
150A (DC)
1.8V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 15A TO247AC
Package: TO-247-2
Stock136,920
TO-247-2
HEXFRED?
Standard
600V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 32A TO247-3
Package: TO-247-3
Stock2,032
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
16A (DC)
1.7V @ 16A
No Recovery Time > 500mA (Io)
0ns
200µA @ 650V
470pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 6A TO220AB
Package: TO-220-3
Stock15,756
TO-220-3
-
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 0V, 1MHz
Through Hole
TO-220-3
P-TO220AB
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO247-3
Package: TO-247-3
Stock2,944
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
20A (DC)
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
210µA @ 650V
590pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock7,008
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 30V 2A SOT363-6
Package: 6-VSSOP, SC-88, SOT-363
Stock3,376
6-VSSOP, SC-88, SOT-363
-
Schottky
30V
2A (DC)
600mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
70pF @ 1V, 1MHz
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
-55°C ~ 125°C
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock23,406
TO-236-3, SC-59, SOT-23-3
-
Schottky
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
100ps
1µA @ 30V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 400V 1A SOT89
Package: TO-243AA
Stock2,656
TO-243AA
-
Standard
400V
1A (DC)
1.6V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1µs
1µA @ 400V
10pF @ 0V, 1MHz
Surface Mount
TO-243AA
PG-SOT89
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 1200V 2A TO252-2
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5,680
TO-252-3, DPak (2 Leads + Tab), SC-63
thinQ!?
Silicon Carbide Schottky
1200V
2A (DC)
1.65V @ 2A
No Recovery Time > 500mA (Io)
0ns
18µA @ 1200V
182pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 8A TO220-2
Package: TO-220-2
Stock7,184
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
140µA @ 650V
250pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C