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Diodes - Rectifiers - Single

Records 584
Page  11/20
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
Package: Die
Stock4,544
Die
-
Standard
600V
20A (DC)
1.95V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 12A TO220-2
Package: TO-220-2
Stock2,384
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
160µA @ 600V
530pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 50A WAFER
Package: Die
Stock6,960
Die
-
Standard
1200V
50A (DC)
2.1V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 3A TO220-2
Package: TO-220-2
Stock7,504
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
3A (DC)
1.7V @ 3A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
100pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO220-2
Package: TO-220-2
Stock5,664
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
180µA @ 650V
300pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 4A VSON-4
Package: 4-PowerTSFN
Stock2,576
4-PowerTSFN
thinQ!?
Silicon Carbide Schottky
650V
4A (DC)
1.7V @ 4A
No Recovery Time > 500mA (Io)
0ns
70µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 5A WAFER
Package: Die
Stock3,280
Die
-
Standard
1200V
5A (DC)
2.1V @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 30V 1A SOD323-2
Package: SC-76, SOD-323
Stock280,902
SC-76, SOD-323
-
Schottky
30V
1A
470mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
35pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
-65°C ~ 125°C
Infineon Technologies
DIODE SCHOTTKY 650V 3A TO263-2
Package: TO-262
Stock4,272
TO-262
thinQ!?
Silicon Carbide Schottky
650V
3A (DC)
1.8V @ 3A
No Recovery Time > 500mA (Io)
0ns
500µA @ 650V
100pF @ 1V, 1MHz
Surface Mount
TO-262
PG-TO263-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 80V 200MA SC79-2
Package: SC-79, SOD-523
Stock4,864
SC-79, SOD-523
-
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
Infineon Technologies
DIODE GEN PURP 1.2KV 100A WAFER
Package: Die
Stock4,432
Die
-
Standard
1200V
100A (DC)
1.6V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 5.6A TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3,040
TO-252-3, DPak (2 Leads + Tab), SC-63
thinQ!?
Silicon Carbide Schottky
600V
5.6A
2.3V @ 4A
No Recovery Time > 500mA (Io)
0ns
25µA @ 600V
80pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO220-2FP
Package: TO-220-2 Full Pack
Stock3,264
TO-220-2 Full Pack
thinQ!?
Silicon Carbide Schottky
600V
3A (DC)
1.9V @ 3A
No Recovery Time > 500mA (Io)
0ns
30µA @ 600V
90pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 4A WAFER
Package: Die
Stock5,488
Die
-
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
150pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock229,020
TO-236-3, SC-59, SOT-23-3
-
Schottky
40V
120mA
750mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 30V
6pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
Package: SC-76, SOD-323
Stock299,994
SC-76, SOD-323
-
Standard
200V
250mA (DC)
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
Infineon Technologies
DIODE GEN PURP 600V 15A WAFER
Package: Die
Stock7,952
Die
-
Standard
600V
15A (DC)
1.95V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
AC/DC DIGITAL PLATFORM
Package: -
Stock6,544
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 600V 6A D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock54,780
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 100A WAFER
Package: Die
Stock6,288
Die
-
Standard
600V
100A (DC)
1.9V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock6,096
TO-236-3, SC-59, SOT-23-3
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock5,904
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 600V TO220-2
Package: -
Stock6,352
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 600V 9A TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3,264
TO-252-3, DPak (2 Leads + Tab), SC-63
thinQ!?
Silicon Carbide Schottky
600V
9A (DC)
2.1V @ 9A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
Package: Die
Stock4,880
Die
-
Standard
600V
20A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 1.2KV 25A DIE
Package: Die
Stock3,280
Die
-
Standard
1200V
25A
2.7V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
190ns
700nA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SC79-2
Package: SC-79, SOD-523
Stock3,536
SC-79, SOD-523
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 650V 30A TO247-3
Package: TO-247-3
Stock6,352
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
30A (DC)
1.7V @ 30A
No Recovery Time > 500mA (Io)
0ns
1.1mA @ 650V
860pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 1200V 7.5A DIE
Package: Die
Stock7,488
Die
thinQ!?
Silicon Carbide Schottky
1200V
7.5A (DC)
1.8V @ 7.5A
No Recovery Time > 500mA (Io)
0ns
180µA @ 1200V
380pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 40A TO247-3
Package: TO-247-3
Stock7,424
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
40A (DC)
1.7V @ 40A
No Recovery Time > 500mA (Io)
0ns
220µA @ 650V
1140pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C