* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
Diode Type |
Voltage - DC Reverse (Vr) (Max) |
Current - Average Rectified (Io) |
Voltage - Forward (Vf) (Max) @ If |
Speed |
Reverse Recovery Time (trr) |
Current - Reverse Leakage @ Vr |
Capacitance @ Vr, F |
Mounting Type |
Package / Case |
Supplier Device Package |
Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock5,824 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3
|
Package: TO-247-3 |
Stock2,704 |
|
TO-247-3 |
thinQ!? |
Silicon Carbide Schottky |
650V |
16A (DC) |
1.7V @ 16A |
No Recovery Time > 500mA (Io) |
0ns |
200µA @ 650V |
470pF @ 1V, 1MHz |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GP 80V 250MA SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,312 |
|
TO-236-3, SC-59, SOT-23-3 |
Automotive, AEC-Q101 |
Standard |
80V |
250mA (DC) |
1.25V @ 150mA |
Fast Recovery =< 500ns, > 200mA (Io) |
4ns |
1µA @ 75V |
2pF @ 0V, 1MHz |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
PG-SOT23-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO252-3
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,192 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
thinQ!? |
Silicon Carbide Schottky |
600V |
8A (DC) |
2.1V @ 8A |
No Recovery Time > 500mA (Io) |
0ns |
70µA @ 600V |
240pF @ 1V, 1MHz |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3
|
Package: TO-247-3 |
Stock20,100 |
|
TO-247-3 |
- |
Standard |
650V |
80A |
2.3V @ 40A |
Fast Recovery =< 500ns, > 200mA (Io) |
75ns |
40µA @ 650V |
- |
Through Hole |
TO-247-3 |
TO-247-3 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2
|
Package: SC-79, SOD-523 |
Stock5,072 |
|
SC-79, SOD-523 |
- |
Schottky |
45V |
750mA (DC) |
600mV @ 200mA |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
10µA @ 45V |
10pF @ 10V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SC79-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2FP
|
Package: TO-220-2 Full Pack |
Stock7,600 |
|
TO-220-2 Full Pack |
thinQ!? |
Silicon Carbide Schottky |
600V |
4A (DC) |
1.9V @ 4A |
No Recovery Time > 500mA (Io) |
0ns |
50µA @ 600V |
130pF @ 1V, 1MHz |
Through Hole |
TO-220-2 Full Pack |
PG-TO220-2 Full Pack |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO252-3
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,848 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
thinQ!? |
Silicon Carbide Schottky |
600V |
6A (DC) |
2.3V @ 6A |
No Recovery Time > 500mA (Io) |
0ns |
50µA @ 600V |
130pF @ 1V, 1MHz |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A TO220-2
|
Package: TO-220-2 |
Stock9,396 |
|
TO-220-2 |
- |
Standard |
1200V |
50A (DC) |
2.15V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
243ns |
100µA @ 1200V |
- |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO220-2
|
Package: TO-220-2 |
Stock2,576 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
8A (DC) |
1.7V @ 8A |
No Recovery Time > 500mA (Io) |
0ns |
280µA @ 650V |
250pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 5A TO252-2
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,968 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
5A (DC) |
1.8V @ 5A |
No Recovery Time > 500mA (Io) |
0ns |
33µA @ 1200V |
301pF @ 1V, 1MHz |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3
|
Package: TO-247-3 |
Stock12,612 |
|
TO-247-3 |
- |
Standard |
650V |
80A |
1.7V @ 40A |
Fast Recovery =< 500ns, > 200mA (Io) |
129ns |
40µA @ 650V |
- |
Through Hole |
TO-247-3 |
TO-247-3 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT323
|
Package: SC-70, SOT-323 |
Stock7,776 |
|
SC-70, SOT-323 |
- |
Schottky |
30V |
200mA (DC) |
800mV @ 100mA |
Small Signal =< 200mA (Io), Any Speed |
5ns |
2µA @ 25V |
10pF @ 1V, 1MHz |
Surface Mount |
SC-70, SOT-323 |
PG-SOT323-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2
|
Package: TO-220-2 |
Stock9,240 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
600V |
10A (DC) |
2.1V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
90µA @ 600V |
290pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 52.3A TO263
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,528 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
- |
Standard |
600V |
52.3A (DC) |
2V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
126ns |
50µA @ 600V |
- |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3-2 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 60A TO247-3
|
Package: TO-247-3 |
Stock5,856 |
|
TO-247-3 |
- |
Standard |
600V |
60A (DC) |
2V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
143ns |
40µA @ 600V |
- |
Through Hole |
TO-247-3 |
TO-247-3 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 200V 250MA SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock515,196 |
|
TO-236-3, SC-59, SOT-23-3 |
- |
Standard |
200V |
250mA (DC) |
1.25V @ 200mA |
Fast Recovery =< 500ns, > 200mA (Io) |
50ns |
100nA @ 200V |
5pF @ 0V, 1MHz |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
PG-SOT23-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 8A TO252-2
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,648 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
8A (DC) |
1.95V @ 8A |
No Recovery Time > 500mA (Io) |
0ns |
40µA @ 1200V |
365pF @ 1V, 1MHz |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO263-2
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,656 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
thinQ!? |
Silicon Carbide Schottky |
650V |
9A (DC) |
1.8V @ 9A |
No Recovery Time > 500mA (Io) |
0ns |
1.6mA @ 650V |
270pF @ 1V, 1MHz |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 71A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,480 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
- |
Standard |
600V |
71A (DC) |
2V @ 45A |
Fast Recovery =< 500ns, > 200mA (Io) |
140ns |
50µA @ 600V |
- |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock7,680 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3
|
Package: TO-247-3 |
Stock5,344 |
|
TO-247-3 |
thinQ!? |
Silicon Carbide Schottky |
650V |
10A (DC) |
1.7V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
400µA @ 650V |
300pF @ 1V, 1MHz |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 100V 250MA SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,008 |
|
TO-236-3, SC-59, SOT-23-3 |
- |
Standard |
100V |
250mA (DC) |
1.25V @ 150mA |
Fast Recovery =< 500ns, > 200mA (Io) |
4ns |
100nA @ 75V |
2pF @ 0V, 1MHz |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
PG-SOT23-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO220-2
|
Package: TO-220-2 |
Stock2,160 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
5A (DC) |
1.7V @ 5A |
No Recovery Time > 500mA (Io) |
0ns |
170µA @ 650V |
160pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2
|
Package: TO-220-2 |
Stock3,536 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
600V |
6A (DC) |
2.3V @ 6A |
No Recovery Time > 500mA (Io) |
0ns |
50µA @ 600V |
130pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO263-2
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,144 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
thinQ!? |
Silicon Carbide Schottky |
650V |
12A (DC) |
1.8V @ 12A |
No Recovery Time > 500mA (Io) |
0ns |
2.1mA @ 650V |
360pF @ 1V, 1MHz |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO220-2
|
Package: TO-220-2 |
Stock3,264 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
4A (DC) |
1.7V @ 4A |
No Recovery Time > 500mA (Io) |
0ns |
140µA @ 650V |
130pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 6A WAFER
|
Package: Die |
Stock4,656 |
|
Die |
- |
Standard |
600V |
6A (DC) |
1.95V @ 6A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SHOCTTKY
|
Package: - |
Stock4,080 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2
|
Package: TO-220-2 |
Stock4,048 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
600V |
5A (DC) |
1.7V @ 5A |
No Recovery Time > 500mA (Io) |
0ns |
70µA @ 600V |
240pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |