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Diodes - Rectifiers - Single

Records 584
Page  12/20
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
Infineon Technologies
DIODE SCHOTTKY 10V 3A SOD323-2
Package: SC-76, SOD-323
Stock77,184
SC-76, SOD-323
-
Schottky
10V
3A (DC)
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 8V
30pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock2,832
TO-252-3, DPak (2 Leads + Tab), SC-63
thinQ!?
Silicon Carbide Schottky
600V
10A (DC)
2.1V @ 10A
No Recovery Time > 500mA (Io)
0ns
90µA @ 600V
290pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
Package: Die
Stock5,664
Die
-
Standard
600V
30A (DC)
1.25V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 3A TO220-2
Package: TO-220-2
Stock2,512
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
3A (DC)
1.7V @ 3A
No Recovery Time > 500mA (Io)
0ns
50µA @ 650V
100pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock2,592
TO-236-3, SC-59, SOT-23-3
-
Schottky
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
100ps
1µA @ 30V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
Package: Die
Stock4,688
Die
-
Standard
600V
20A (DC)
1.95V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 150A WAFER
Package: Die
Stock6,832
Die
-
Standard
600V
150A (DC)
1.25V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 6A TO263-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7,520
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
650V
6A (DC)
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
1.1mA @ 650V
190pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 40V 120MA TSLP-2
Package: SOD-882
Stock3,184
SOD-882
-
Schottky
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
100ps
1µA @ 30V
5pF @ 0V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
Package: Die
Stock4,896
Die
-
Standard
1200V
15A (DC)
2.1V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SIC 600V 8A SAWN WAFER
Package: Die
Stock3,536
Die
thinQ!?
Silicon Carbide Schottky
600V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Surface Mount
Die
Die
-55°C ~ 175°C
Infineon Technologies
DIODE SHOCTTKY
Package: -
Stock3,040
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
Package: Die
Stock2,192
Die
-
Standard
1200V
15A (DC)
1.6V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock4,976
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 1200V 10A TO220-2
Package: TO-220-2
Stock15,888
TO-220-2
thinQ!?
Silicon Carbide Schottky
1200V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
62µA @ 1200V
525pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 80V 250MA SOD323
Package: SC-76, SOD-323
Stock343,224
SC-76, SOD-323
-
Standard
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 650V 30A TO247-3
Package: TO-247-3
Stock5,632
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
30A (DC)
1.7V @ 30A
No Recovery Time > 500mA (Io)
0ns
220µA @ 650V
860pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.7KV 50A WAFER
Package: Die
Stock5,760
Die
-
Standard
1700V
50A (DC)
1.8V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 650V 60A TO220-2
Package: TO-220-2
Stock16,800
TO-220-2
-
Standard
650V
60A (DC)
1.7V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
64ns
40µA @ 650V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
Package: Die
Stock5,328
Die
-
Standard
1200V
15A (DC)
1.9V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock7,888
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock3,424
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 600V 12A TO220-2
Package: TO-220-2
Stock10,908
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
12A (DC)
2.1V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SHOCTTKY
Package: -
Stock6,864
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 600V 6A WAFER
Package: Die
Stock7,856
Die
-
Standard
600V
6A (DC)
1.6V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
Infineon Technologies
SIC DIODES
Package: -
Stock5,296
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 30V 1A SOD323-2
Package: SC-76, SOD-323
Stock44,532
SC-76, SOD-323
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 30V
40pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
-65°C ~ 125°C
Infineon Technologies
DIODE GEN PURP 600V 150A TO247-3
Package: TO-247-3
Stock9,132
TO-247-3
-
Standard
600V
150A (DC)
2V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
40µA @ 600V
-
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 100A WAFER
Package: Die
Stock3,424
Die
-
Standard
1200V
100A (DC)
2.1V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SCD80-2
Package: SC-80
Stock6,064
SC-80
-
Schottky
40V
120mA
750mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 30V
6pF @ 1V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
150°C (Max)