SalesDept@topcomponents.cc +8613427370519
Login / Registro
Language Translation

* Please refer to the English Version as our Official Version.

Solicitação de cotação

Diodes - Rectifiers - Single

Records 584
Page  2/20
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
Infineon Technologies
DIODE GEN PURP 80V 200MA SCD80-2
Package: SC-80
Stock3,680
SC-80
-
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO220-2
Package: TO-220-2
Stock5,696
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 1200V 5A TO220-2
Package: TO-220-2
Stock5,312
TO-220-2
thinQ!?
Silicon Carbide Schottky
1200V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
120µA @ 1200V
250pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock3,408
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 600V TO220-2
Package: -
Stock5,728
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP WAFER
Package: Die
Stock3,456
Die
-
Standard
-
-
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 1.2KV 28A TO220-2
Package: TO-220-2
Stock3,600
TO-220-2
-
Standard
1200V
28A (DC)
2.15V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
Package: Die
Stock6,480
Die
-
Standard
600V
20A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO220-2
Package: TO-220-2
Stock3,264
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
4A (DC)
2.3V @ 4A
No Recovery Time > 500mA (Io)
0ns
25µA @ 600V
80pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 12A TO220-2
Package: TO-220-2
Stock6,480
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
190µA @ 650V
360pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
Infineon Technologies
SIC DIODES
Package: -
Stock2,304
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 600V 6A TO220-2
Package: TO-220-2
Stock5,296
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 35A WAFER
Package: Die
Stock7,232
Die
-
Standard
1200V
35A (DC)
2.1V @ 35A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 22.5A WAFER
Package: Die
Stock7,856
Die
-
Standard
600V
22.5A (DC)
1.6V @ 22.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO247-3
Package: TO-247-3
Stock2,352
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
20A (DC)
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
700µA @ 650V
590pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 100A WAFER
Package: Die
Stock6,512
Die
-
Standard
600V
100A (DC)
1.25V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURPOSE SAWN WAFER
Package: -
Stock6,528
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock6,512
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 600V 200A WAFER
Package: Die
Stock4,960
Die
-
Standard
600V
200A (DC)
1.25V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 12A TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3,504
TO-252-3, DPak (2 Leads + Tab), SC-63
thinQ!?
Silicon Carbide Schottky
600V
12A (DC)
2.1V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock7,888
TO-236-3, SC-59, SOT-23-3
-
Standard
80V
250mA (DC)
1.25V @ 150mA
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO220-2
Package: TO-220-2
Stock19,728
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
8A (DC)
2.1V @ 8A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SIC 600V 5A SAWN WAFER
Package: Die
Stock2,736
Die
thinQ!?
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Surface Mount
Die
Die
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 12A VSON-4
Package: 4-PowerTSFN
Stock3,024
4-PowerTSFN
thinQ!?
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
190µA @ 650V
360pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
Infineon Technologies
DIODE SILICON 600V 10A D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7,072
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
600V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
140µA @ 600V
480pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
Package: Die
Stock5,456
Die
-
Standard
600V
50A (DC)
1.25V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 650V 28A TO220-2
Package: TO-220-2 Full Pack
Stock21,132
TO-220-2 Full Pack
-
Standard
650V
28A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
40µA @ 650V
-
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-40°C ~ 175°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock7,552
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock5,264
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 600V 71A TO220-2
Package: TO-220-2
Stock17,544
TO-220-2
-
Standard
600V
71A (DC)
2V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C