* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
Diode Type |
Voltage - DC Reverse (Vr) (Max) |
Current - Average Rectified (Io) |
Voltage - Forward (Vf) (Max) @ If |
Speed |
Reverse Recovery Time (trr) |
Current - Reverse Leakage @ Vr |
Capacitance @ Vr, F |
Mounting Type |
Package / Case |
Supplier Device Package |
Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2
|
Package: TO-220-2 |
Stock2,992 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
10A (DC) |
1.7V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
340µA @ 650V |
300pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 650V 8A TO220-2
|
Package: TO-220-2 |
Stock6,780 |
|
TO-220-2 |
- |
Standard |
650V |
8A |
2.3V @ 8A |
Fast Recovery =< 500ns, > 200mA (Io) |
40ns |
40µA @ 650V |
- |
Through Hole |
TO-220-2 |
TO-220-2 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2
|
Package: SC-79, SOD-523 |
Stock7,280 |
|
SC-79, SOD-523 |
- |
Schottky |
45V |
750mA (DC) |
600mV @ 200mA |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
10µA @ 45V |
10pF @ 10V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SC79-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 28A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,264 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
- |
Standard |
1200V |
28A (DC) |
2.15V @ 12A |
Fast Recovery =< 500ns, > 200mA (Io) |
150ns |
100µA @ 1200V |
- |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3-2 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 150A WAFER
|
Package: Die |
Stock4,032 |
|
Die |
- |
Standard |
1700V |
150A (DC) |
1.8V @ 150A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1700V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2
|
Package: TO-220-2 |
Stock6,880 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
9A (DC) |
1.7V @ 9A |
No Recovery Time > 500mA (Io) |
0ns |
310µA @ 650V |
270pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 11.2A TO220
|
Package: TO-220-2 |
Stock40,020 |
|
TO-220-2 |
- |
Standard |
1200V |
11.2A (DC) |
2.15V @ 4A |
Fast Recovery =< 500ns, > 200mA (Io) |
115ns |
100µA @ 1200V |
- |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO263-2
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,136 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
thinQ!? |
Silicon Carbide Schottky |
650V |
3A (DC) |
1.8V @ 3A |
No Recovery Time > 500mA (Io) |
0ns |
500µA @ 650V |
100pF @ 1V, 1MHz |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 8A VSON-4
|
Package: 4-PowerTSFN |
Stock4,976 |
|
4-PowerTSFN |
thinQ!? |
Silicon Carbide Schottky |
650V |
8A (DC) |
1.7V @ 8A |
No Recovery Time > 500mA (Io) |
0ns |
140µA @ 650V |
250pF @ 1V, 1MHz |
Surface Mount |
4-PowerTSFN |
PG-VSON-4 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER
|
Package: Die |
Stock4,960 |
|
Die |
- |
Standard |
1200V |
25A (DC) |
1.9V @ 25A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1200V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SILICON 300V 10A WAFER
|
Package: Die |
Stock6,688 |
|
Die |
- |
Silicon Carbide Schottky |
300V |
10A (DC) |
1.7V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
200µA @ 300V |
600pF @ 1V, 1MHz |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2
|
Package: SC-79, SOD-523 |
Stock1,137,378 |
|
SC-79, SOD-523 |
- |
Schottky |
45V |
750mA (DC) |
600mV @ 200mA |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
10µA @ 45V |
10pF @ 10V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SC79-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 100V 250MA SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock281,166 |
|
TO-236-3, SC-59, SOT-23-3 |
- |
Standard |
100V |
250mA (DC) |
1.25V @ 150mA |
Fast Recovery =< 500ns, > 200mA (Io) |
4ns |
100nA @ 75V |
2pF @ 0V, 1MHz |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
PG-SOT23-3 |
150°C (Max) |
||
Infineon Technologies |
AC/DC DIGITAL PLATFORM
|
Package: - |
Stock6,384 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4
|
Package: 4-PowerTSFN |
Stock7,568 |
|
4-PowerTSFN |
thinQ!? |
Silicon Carbide Schottky |
650V |
6A (DC) |
1.7V @ 6A |
No Recovery Time > 500mA (Io) |
0ns |
110µA @ 650V |
190pF @ 1V, 1MHz |
Surface Mount |
4-PowerTSFN |
PG-VSON-4 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 52.3A TO220
|
Package: TO-220-2 |
Stock7,312 |
|
TO-220-2 |
- |
Standard |
600V |
52.3A (DC) |
2V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
126ns |
50µA @ 600V |
- |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323
|
Package: SC-70, SOT-323 |
Stock7,040 |
|
SC-70, SOT-323 |
- |
Standard |
80V |
250mA (DC) |
1.25V @ 150mA |
Fast Recovery =< 500ns, > 200mA (Io) |
4ns |
1µA @ 75V |
2pF @ 0V, 1MHz |
Surface Mount |
SC-70, SOT-323 |
PG-SOT323-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO263-2
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,944 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
thinQ!? |
Silicon Carbide Schottky |
650V |
2A (DC) |
1.8V @ 2A |
No Recovery Time > 500mA (Io) |
0ns |
330µA @ 650V |
70pF @ 1V, 1MHz |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHTKY 1200V 38A PGTO252-2
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,688 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
38A (DC) |
1.8V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
62µA @ 12V |
29pF @ 800V, 1MHz |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-2 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2
|
Package: TO-220-2 |
Stock7,344 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
600V |
3A (DC) |
2.3V @ 3A |
No Recovery Time > 500mA (Io) |
0ns |
15µA @ 600V |
60pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 600MA WAFER
|
Package: Die |
Stock2,448 |
|
Die |
- |
Standard |
1200V |
600mA (DC) |
1.6V @ 600mA |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1200V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP DSO-19
|
Package: - |
Stock5,664 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,872 |
|
TO-236-3, SC-59, SOT-23-3 |
- |
Standard |
80V |
250mA (DC) |
1.25V @ 150mA |
Fast Recovery =< 500ns, > 200mA (Io) |
4ns |
1µA @ 75V |
2pF @ 0V, 1MHz |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
PG-SOT23-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 600V 60A TO247-3
|
Package: TO-247-3 |
Stock5,072 |
|
TO-247-3 |
- |
Standard |
600V |
60A (DC) |
2V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
143ns |
40µA @ 600V |
- |
Through Hole |
TO-247-3 |
TO-247-3 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 70V 70MA TSLP-2
|
Package: SOD-882 |
Stock3,920 |
|
SOD-882 |
- |
Schottky |
70V |
70mA (DC) |
1V @ 15mA |
Small Signal =< 200mA (Io), Any Speed |
100ps |
100nA @ 50V |
2pF @ 0V, 1MHz |
Surface Mount |
SOD-882 |
PG-TSLP-2 |
-55°C ~ 125°C |
||
Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323
|
Package: SC-70, SOT-323 |
Stock6,704 |
|
SC-70, SOT-323 |
- |
Standard |
80V |
250mA (DC) |
1.25V @ 150mA |
Fast Recovery =< 500ns, > 200mA (Io) |
4ns |
1µA @ 75V |
2pF @ 0V, 1MHz |
Surface Mount |
SC-70, SOT-323 |
PG-SOT323-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 650V 15A TO220
|
Package: TO-220-2 |
Stock15,018 |
|
TO-220-2 |
- |
Standard |
650V |
15A |
2.3V @ 15A |
Fast Recovery =< 500ns, > 200mA (Io) |
47ns |
40µA @ 650V |
- |
Through Hole |
TO-220-2 |
TO-220 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 5A TO220-2
|
Package: TO-220-2 |
Stock7,872 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
5A (DC) |
1.8V @ 5A |
No Recovery Time > 500mA (Io) |
0ns |
33µA @ 1200V |
301pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2-1 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 7.3A TO252-3
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,944 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
- |
Standard |
600V |
7.3A (DC) |
2V @ 3A |
Fast Recovery =< 500ns, > 200mA (Io) |
62ns |
50µA @ 600V |
- |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3
|
Package: TO-247-3 |
Stock3,984 |
|
TO-247-3 |
thinQ!? |
Silicon Carbide Schottky |
650V |
10A (DC) |
1.7V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
180µA @ 650V |
300pF @ 1V, 1MHz |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-55°C ~ 175°C |