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Diodes - Rectifiers - Single

Records 584
Page  5/20
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock7,792
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
Package: Die
Stock3,360
Die
-
Standard
600V
30A (DC)
1.25V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
IC DIODE EMITTER CTLR WAFER
Package: -
Stock3,008
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 4V 110MA TSSLP-2
Package: 2-XFDFN
Stock3,488
2-XFDFN
-
Schottky
4V
110mA (DC)
410mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 1V
350pF @ 0V, 1MHz
Surface Mount
2-XFDFN
PG-TSSLP-2-3
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock6,848
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 3A WAFER
Package: Die
Stock7,312
Die
-
Standard
1200V
3A (DC)
1.6V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 650V 60A TO247-3
Package: TO-247-3
Stock13,806
TO-247-3
-
Standard
650V
60A
1.7V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
115ns
40µA @ 650V
-
Through Hole
TO-247-3
TO-247-3
-40°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 35A WAFER
Package: Die
Stock5,088
Die
-
Standard
1200V
35A (DC)
1.6V @ 35A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock2,192
TO-236-3, SC-59, SOT-23-3
-
Standard
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 70V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-65°C ~ 150°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock4,816
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 650V 8A TO220-2
Package: TO-220-2
Stock19,332
TO-220-2
-
Standard
650V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 1.2KV 5A TO247HC
Package: TO-247-3 Variant
Stock2,096
TO-247-3 Variant
thinQ!?
Silicon Carbide Schottky
1200V
5A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
120µA @ 1200V
250pF @ 1V, 1MHz
Through Hole
TO-247-3 Variant
PG-TO247HC-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 150A DIE
Package: Die
Stock6,000
Die
-
Standard
1200V
150A
2.7V @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
355ns
3µA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock5,632
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
Package: Die
Stock7,936
Die
-
Standard
600V
50A (DC)
1.9V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOD323
Package: SC-76, SOD-323
Stock3,664
SC-76, SOD-323
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO252
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5,648
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 15A TO220AC
Package: TO-220-2
Stock123,660
TO-220-2
HEXFRED?
Standard
600V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 1.2KV 100A WAFER
Package: Die
Stock5,296
Die
-
Standard
1200V
100A (DC)
1.9V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 6A WAFER
Package: Die
Stock5,600
Die
-
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 12A TO247-3
Package: TO-247-3
Stock4,048
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
190µA @ 650V
360pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock2,320
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 1.2KV 75A DIE
Package: Die
Stock5,136
Die
-
Standard
1200V
75A
2.7V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
285ns
1.5µA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO252-3
Package: -
Stock3,856
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 600V 19.3A TO252
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock2,064
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Standard
600V
19.3A (DC)
2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
Infineon Technologies
SIC DIODES
Package: -
Stock4,480
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 1.2KV 50A WAFER
Package: Die
Stock2,416
Die
-
Standard
1200V
50A (DC)
1.9V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO220-2
Package: TO-220-2
Stock52,524
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
150pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 4A TO263-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock5,168
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
650V
4A (DC)
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
670µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO220-2
Package: TO-220-2
Stock3,152
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
130pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C