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Diodes - Rectifiers - Single

Records 584
Page  7/20
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO220-2
Package: TO-220-2
Stock5,232
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
20A (DC)
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
700µA @ 650V
590pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 6A TO220-2FP
Package: TO-220-2 Full Pack
Stock6,640
TO-220-2 Full Pack
thinQ!?
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 10A WAFER
Package: Die
Stock7,616
Die
-
Standard
600V
10A (DC)
1.25V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 75A WAFER
Package: Die
Stock7,056
Die
-
Standard
600V
75A (DC)
1.9V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
Package: Die
Stock7,696
Die
-
Standard
600V
30A (DC)
1.95V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 6A TO220-2
Package: TO-220-2
Stock6,256
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
110µA @ 650V
190pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 15A WAFER
Package: Die
Stock6,208
Die
-
Standard
600V
15A (DC)
1.25V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
250µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 1.2KV 75A WAFER
Package: Die
Stock7,184
Die
-
Standard
1200V
75A (DC)
1.6V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 6A D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3,376
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 7A WAFER
Package: Die
Stock7,920
Die
-
Standard
1200V
7A (DC)
2.1V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock7,712
TO-236-3, SC-59, SOT-23-3
-
Standard
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 70V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-65°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 5A WAFER
Package: Die
Stock7,184
Die
-
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
170pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock12,000
TO-252-3, DPak (2 Leads + Tab), SC-63
thinQ!?
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
150pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-TO252-3
-55°C ~ 175°C
Infineon Technologies
DIODE SIC 600V 4A SAWN WAFER
Package: Die
Stock2,544
Die
thinQ!?
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
130pF @ 1V, 1MHz
Surface Mount
Die
Die
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
Package: Die
Stock7,136
Die
-
Standard
600V
50A (DC)
1.25V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SHOCTTKY
Package: -
Stock3,744
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 300V 10A TO220-3
Package: TO-220-3
Stock3,568
TO-220-3
thinQ!?
Silicon Carbide Schottky
300V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 300V
600pF @ 0V, 1MHz
Through Hole
TO-220-3
PG-TO220-3
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 70V 70MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock3,328
TO-236-3, SC-59, SOT-23-3
-
Schottky
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-55°C ~ 125°C
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock98,682
TO-236-3, SC-59, SOT-23-3
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock3,328
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 1.7KV 100A WAFER
Package: Die
Stock6,528
Die
-
Standard
1700V
100A (DC)
2.15V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO263-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3,312
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
650V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
1.7mA @ 650V
300pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
Package: SC-76, SOD-323
Stock5,808
SC-76, SOD-323
-
Standard
200V
250mA (DC)
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C (Max)
Infineon Technologies
DIODE GEN PURP 650V 8A TO220-2
Package: TO-220-2
Stock7,500
TO-220-2
-
Standard
650V
8A
2.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 80V 200MA TSLP-2
Package: SOD-882
Stock4,672
SOD-882
-
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SC79-2
Package: SC-79, SOD-523
Stock3,264
SC-79, SOD-523
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 650V 4A TO220-2
Package: TO-220-2
Stock7,888
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
4A (DC)
1.7V @ 4A
No Recovery Time > 500mA (Io)
0ns
70µA @ 650V
130pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 35A WAFER
Package: Die
Stock4,832
Die
-
Standard
1200V
35A (DC)
1.9V @ 35A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 1.2KV 5A WAFER
Package: Die
Stock2,704
Die
-
Standard
1200V
5A (DC)
1.9V @ 5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 10A VSON-4
Package: 4-PowerTSFN
Stock4,496
4-PowerTSFN
thinQ!?
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
180µA @ 650V
300pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C