* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
Diode Type |
Voltage - DC Reverse (Vr) (Max) |
Current - Average Rectified (Io) |
Voltage - Forward (Vf) (Max) @ If |
Speed |
Reverse Recovery Time (trr) |
Current - Reverse Leakage @ Vr |
Capacitance @ Vr, F |
Mounting Type |
Package / Case |
Supplier Device Package |
Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE GEN PURP 1.2KV 31A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,792 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
- |
Standard |
1200V |
31A (DC) |
2.15V @ 18A |
Fast Recovery =< 500ns, > 200mA (Io) |
195ns |
100µA @ 1200V |
- |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247-3
|
Package: TO-247-3 |
Stock7,360 |
|
TO-247-3 |
thinQ!? |
Silicon Carbide Schottky |
650V |
40A (DC) |
1.7V @ 40A |
No Recovery Time > 500mA (Io) |
0ns |
1.4mA @ 650V |
1140pF @ 1V, 1MHz |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 650V 30A TO220-2
|
Package: TO-220-2 Full Pack |
Stock17,700 |
|
TO-220-2 Full Pack |
- |
Standard |
650V |
30A (DC) |
2.2V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
42ns |
40µA @ 650V |
- |
Through Hole |
TO-220-2 Full Pack |
PG-TO220-2 Full Pack |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 7.5A DIE
|
Package: Die |
Stock4,880 |
|
Die |
thinQ!? |
Silicon Carbide Schottky |
1200V |
7.5A (DC) |
1.8V @ 7.5A |
No Recovery Time > 500mA (Io) |
0ns |
180µA @ 1200V |
380pF @ 1V, 1MHz |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 175°C |
||
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER
|
Package: - |
Stock6,816 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE GEN PURP 600V 22.5A WAFER
|
Package: Die |
Stock3,568 |
|
Die |
- |
Standard |
600V |
22.5A (DC) |
1.6V @ 22.5A |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2
|
Package: TO-220-2 |
Stock5,552 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
10A (DC) |
1.7V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
180µA @ 650V |
300pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER
|
Package: Die |
Stock4,672 |
|
Die |
- |
Standard |
600V |
150A (DC) |
1.9V @ 150A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 5.6A TO252-3
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,296 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
thinQ!? |
Silicon Carbide Schottky |
600V |
5.6A |
1.9V @ 4A |
No Recovery Time > 500mA (Io) |
0ns |
50µA @ 600V |
130pF @ 1V, 1MHz |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO247-3
|
Package: TO-247-3 |
Stock7,216 |
|
TO-247-3 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
10A (DC) |
1.8V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
240µA @ 1200V |
580pF @ 1V, 1MHz |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 30V 2A SOT363-6
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock5,840 |
|
6-VSSOP, SC-88, SOT-363 |
- |
Schottky |
30V |
2A (DC) |
600mV @ 2A |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
200µA @ 30V |
70pF @ 1V, 1MHz |
Surface Mount |
6-VSSOP, SC-88, SOT-363 |
PG-SOT363-6 |
-55°C ~ 125°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO220-2
|
Package: TO-220-2 |
Stock7,848 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
2A (DC) |
1.65V @ 2A |
No Recovery Time > 500mA (Io) |
0ns |
18µA @ 1200V |
182pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2-1 |
175°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 650V 40A TO220-2
|
Package: TO-220-2 |
Stock2,336 |
|
TO-220-2 |
- |
Standard |
650V |
40A (DC) |
2.2V @ 20A |
Fast Recovery =< 500ns, > 200mA (Io) |
32ns |
40µA @ 650V |
- |
Through Hole |
TO-220-2 |
PG-TO220-2-1 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER
|
Package: Die |
Stock5,568 |
|
Die |
thinQ!? |
Silicon Carbide Schottky |
600V |
8A (DC) |
1.7V @ 8A |
No Recovery Time > 500mA (Io) |
0ns |
100µA @ 600V |
310pF @ 1V, 1MHz |
Surface Mount |
Die |
Die |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SHOCTTKY
|
Package: - |
Stock3,216 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE GEN PURP 600V 41A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,952 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
- |
Standard |
600V |
41A (DC) |
2V @ 23A |
Fast Recovery =< 500ns, > 200mA (Io) |
120ns |
50µA @ 600V |
- |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 10V 3A SOD323-2
|
Package: SC-76, SOD-323 |
Stock142,470 |
|
SC-76, SOD-323 |
- |
Schottky |
10V |
3A (DC) |
370mV @ 1A |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
2.6mA @ 8V |
35pF @ 5V, 1MHz |
Surface Mount |
SC-76, SOD-323 |
PG-SOD323-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 24A TO247-3
|
Package: TO-247-3 |
Stock7,824 |
|
TO-247-3 |
thinQ!? |
Silicon Carbide Schottky |
650V |
12A (DC) |
1.7V @ 12A |
No Recovery Time > 500mA (Io) |
0ns |
190µA @ 650V |
360pF @ 1V, 1MHz |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2
|
Package: TO-220-2 |
Stock3,152 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
600V |
5A (DC) |
1.7V @ 5A |
No Recovery Time > 500mA (Io) |
0ns |
200µA @ 600V |
170pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER
|
Package: Die |
Stock3,872 |
|
Die |
- |
Standard |
1700V |
75A (DC) |
2.15V @ 75A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1700V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 14.7A TO252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,488 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
- |
Standard |
600V |
14.7A (DC) |
2V @ 6A |
Fast Recovery =< 500ns, > 200mA (Io) |
70ns |
50µA @ 600V |
- |
Surface Mount |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
PG-TO252-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 16A TO220-2
|
Package: TO-220-2 |
Stock8,472 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
16A (DC) |
1.95V @ 16A |
No Recovery Time > 500mA (Io) |
0ns |
50µA @ 1200V |
730pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2-1 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323
|
Package: SC-70, SOT-323 |
Stock3,328 |
|
SC-70, SOT-323 |
- |
Standard |
80V |
250mA (DC) |
1.25V @ 150mA |
Fast Recovery =< 500ns, > 200mA (Io) |
4ns |
1µA @ 75V |
2pF @ 0V, 1MHz |
Surface Mount |
SC-70, SOT-323 |
PG-SOT323-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
|
Package: - |
Stock6,320 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 4V 110MA TSLP-2
|
Package: 2-XDFN |
Stock3,328 |
|
2-XDFN |
- |
Schottky |
4V |
110mA (DC) |
410mV @ 10mA |
Small Signal =< 200mA (Io), Any Speed |
- |
5µA @ 1V |
350pF @ 0V, 1MHz |
Surface Mount |
2-XDFN |
PG-TSLP-2-19 |
-55°C ~ 150°C |
||
Infineon Technologies |
SIC DIODES
|
Package: - |
Stock3,920 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE GEN PURP 80V 200MA SC79-2
|
Package: SC-79, SOD-523 |
Stock125,358 |
|
SC-79, SOD-523 |
- |
Standard |
80V |
200mA (DC) |
1.25V @ 150mA |
Small Signal =< 200mA (Io), Any Speed |
4ns |
1µA @ 75V |
2pF @ 0V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SC79-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 600V 21A TO22FP
|
Package: TO-220-2 Full Pack |
Stock7,632 |
|
TO-220-2 Full Pack |
- |
Standard |
600V |
21A |
2.05V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
130ns |
40µA @ 600V |
- |
Through Hole |
TO-220-2 Full Pack |
PG-TO220-2 Full Pack |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO263-2
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,808 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
thinQ!? |
Silicon Carbide Schottky |
650V |
4A (DC) |
1.8V @ 4A |
No Recovery Time > 500mA (Io) |
0ns |
670µA @ 650V |
130pF @ 1V, 1MHz |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO220-2
|
Package: TO-220-2 |
Stock6,928 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
600V |
9A (DC) |
2.1V @ 9A |
No Recovery Time > 500mA (Io) |
0ns |
80µA @ 600V |
280pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |