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Diodes - Rectifiers - Single

Records 584
Page  8/20
Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock4,960
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO220-2
Package: TO-220-2
Stock10,764
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
300µA @ 600V
280pF @ 0V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 70V 70MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock2,976
TO-236-3, SC-59, SOT-23-3
-
Schottky
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-55°C ~ 125°C
Infineon Technologies
DIODE SCHOTTKY 1.2KV 7.5A TO220
Package: TO-220-2
Stock4,480
TO-220-2
thinQ!?
Silicon Carbide Schottky
1200V
7.5A (DC)
1.8V @ 7.5A
No Recovery Time > 500mA (Io)
0ns
180µA @ 1200V
380pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO220-2
Package: TO-220-2
Stock3,888
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
5A (DC)
2.3V @ 5A
No Recovery Time > 500mA (Io)
0ns
30µA @ 600V
110pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURPOSE SAWN WAFER
Package: -
Stock4,832
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
Package: SC-70, SOT-323
Stock5,984
SC-70, SOT-323
-
Standard
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3
150°C (Max)
Infineon Technologies
DIODE GEN PURP 600V 15A WAFER
Package: Die
Stock6,336
Die
-
Standard
600V
15A (DC)
1.6V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 9A WAFER
Package: Die
Stock2,560
Die
-
Standard
600V
9A (DC)
1.6V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 70V 70MA SCD80-2
Package: SC-80
Stock5,520
SC-80
-
Schottky
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
-55°C ~ 125°C
Infineon Technologies
DIODE SCHOTTKY 1200V 15A TO247-3
Package: TO-247-3
Stock2,896
TO-247-3
thinQ!?
Silicon Carbide Schottky
1200V
15A (DC)
1.8V @ 15A
No Recovery Time > 500mA (Io)
0ns
305µA @ 1200V
870pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock3,344
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 70V 70MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock262,308
TO-236-3, SC-59, SOT-23-3
-
Schottky
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-55°C ~ 125°C
Infineon Technologies
DIODE GEN PURP 100V 250MA SOT23
Package: TO-236-3, SC-59, SOT-23-3
Stock308,106
TO-236-3, SC-59, SOT-23-3
-
Standard
100V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 650V 6A TO220-2
Package: TO-220-2
Stock5,552
TO-220-2
thinQ!?
Silicon Carbide Schottky
650V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
210µA @ 650V
190pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO220-2
Package: TO-220-2
Stock3,392
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
140µA @ 600V
480pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 1200V 15A TO220-2
Package: TO-220-2
Stock2,112
TO-220-2
thinQ!?
Silicon Carbide Schottky
1200V
15A (DC)
1.8V @ 15A
No Recovery Time > 500mA (Io)
0ns
360µA @ 1200V
750pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 45V 750MA SC79-2
Package: SC-79, SOD-523
Stock5,104
SC-79, SOD-523
-
Schottky
45V
750mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 45V
10pF @ 10V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 45V 750MA SC79-2
Package: SC-79, SOD-523
Stock173,892
SC-79, SOD-523
-
Schottky
45V
750mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 45V
10pF @ 10V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 600V 6A D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7,120
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-
Infineon Technologies
IC DIODE EMITTER CTLR WAFER
Package: -
Stock5,440
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO247-3
Package: TO-247-3
Stock2,704
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
180µA @ 650V
300pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 6A TO263-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3,552
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
650V
6A (DC)
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
1.1mA @ 650V
190pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 7.5A WAFER
Package: Die
Stock2,384
Die
-
Standard
1200V
7.5A (DC)
1.6V @ 7.5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 29.2A D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock7,360
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 40A TO247-3
Package: TO-247-3
Stock3,488
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
20A (DC)
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
210µA @ 650V
590pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5,136
TO-252-3, DPak (2 Leads + Tab), SC-63
thinQ!?
Silicon Carbide Schottky
600V
5A (DC)
2.3V @ 5A
No Recovery Time > 500mA (Io)
0ns
30µA @ 600V
110pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 650V 2A TO263-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2,160
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
650V
2A (DC)
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
330µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 50A WAFER
Package: Die
Stock4,448
Die
-
Standard
1200V
50A (DC)
1.6V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 16A TO220-2
Package: TO-220-2
Stock4,416
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
16A (DC)
1.7V @ 16A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
650pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C