* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
Diode Type |
Voltage - DC Reverse (Vr) (Max) |
Current - Average Rectified (Io) |
Voltage - Forward (Vf) (Max) @ If |
Speed |
Reverse Recovery Time (trr) |
Current - Reverse Leakage @ Vr |
Capacitance @ Vr, F |
Mounting Type |
Package / Case |
Supplier Device Package |
Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT323
|
Package: SC-70, SOT-323 |
Stock4,592 |
|
SC-70, SOT-323 |
- |
Schottky |
30V |
200mA (DC) |
800mV @ 100mA |
Small Signal =< 200mA (Io), Any Speed |
5ns |
2µA @ 25V |
10pF @ 1V, 1MHz |
Surface Mount |
SC-70, SOT-323 |
PG-SOT323-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 600V 41A TO220-2
|
Package: TO-220-2 |
Stock2,096 |
|
TO-220-2 |
- |
Standard |
600V |
41A (DC) |
2V @ 23A |
Fast Recovery =< 500ns, > 200mA (Io) |
120ns |
50µA @ 600V |
- |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2
|
Package: TO-220-2 |
Stock6,256 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
600V |
10A (DC) |
1.7V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
350µA @ 600V |
350pF @ 0V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SOD323-2
|
Package: SC-76, SOD-323 |
Stock174,258 |
|
SC-76, SOD-323 |
- |
Schottky |
70V |
70mA (DC) |
1V @ 15mA |
Small Signal =< 200mA (Io), Any Speed |
100ps |
100nA @ 50V |
2pF @ 0V, 1MHz |
Surface Mount |
SC-76, SOD-323 |
PG-SOD323-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 30V 500MA TSLP-2
|
Package: SOD-882 |
Stock3,568 |
|
SOD-882 |
- |
Schottky |
30V |
500mA (DC) |
500mV @ 500mA |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
300µA @ 30V |
15pF @ 5V, 1MHz |
Surface Mount |
SOD-882 |
PG-TSLP-2 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 650V 150A TO247-3
|
Package: TO-247-3 |
Stock13,140 |
|
TO-247-3 |
- |
Standard |
650V |
150A (DC) |
1.7V @ 75A |
Fast Recovery =< 500ns, > 200mA (Io) |
108ns |
40µA @ 650V |
- |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SCD80-2
|
Package: SC-80 |
Stock4,640 |
|
SC-80 |
- |
Schottky |
40V |
120mA |
750mV @ 100mA |
Small Signal =< 200mA (Io), Any Speed |
5ns |
2µA @ 30V |
6pF @ 1V, 1MHz |
Surface Mount |
SC-80 |
PG-SCD80-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER
|
Package: Die |
Stock2,096 |
|
Die |
- |
Standard |
600V |
50A (DC) |
1.9V @ 50A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 10A DIE
|
Package: Die |
Stock2,336 |
|
Die |
- |
Standard |
1200V |
10A |
2.7V @ 10A |
Fast Recovery =< 500ns, > 200mA (Io) |
154ns |
200nA @ 1200V |
- |
Surface Mount |
Die |
Die |
-40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 3A WAFER
|
Package: Die |
Stock4,640 |
|
Die |
- |
Standard |
600V |
3A (DC) |
1.6V @ 3A |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER
|
Package: Die |
Stock7,472 |
|
Die |
- |
Standard |
1200V |
75A (DC) |
2.1V @ 75A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1200V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER
|
Package: Die |
Stock6,128 |
|
Die |
- |
Standard |
1200V |
150A (DC) |
1.6V @ 150A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1200V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 4V 110MA SC79-2
|
Package: 2-XFDFN |
Stock3,232 |
|
2-XFDFN |
- |
Schottky |
4V |
110mA (DC) |
410mV @ 10mA |
Small Signal =< 200mA (Io), Any Speed |
- |
5µA @ 1V |
230pF @ 0V, 1MHz |
Surface Mount |
2-XFDFN |
PG-TSSLP-2-1 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO263-2
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,296 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
thinQ!? |
Silicon Carbide Schottky |
650V |
8A (DC) |
1.8V @ 8A |
No Recovery Time > 500mA (Io) |
0ns |
1.4mA @ 650V |
250pF @ 1V, 1MHz |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 50V 250MA SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock98,910 |
|
TO-236-3, SC-59, SOT-23-3 |
- |
Standard |
50V |
250mA (DC) |
1V @ 100mA |
Fast Recovery =< 500ns, > 200mA (Io) |
4ns |
100nA @ 50V |
2pF @ 0V, 1MHz |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
PG-SOT23-3 |
-65°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 40V 250MA SC79-2
|
Package: SC-79, SOD-523 |
Stock130,644 |
|
SC-79, SOD-523 |
- |
Schottky |
40V |
250mA (DC) |
750mV @ 100mA |
Fast Recovery =< 500ns, > 200mA (Io) |
5ns |
2µA @ 30V |
6pF @ 0V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SC79-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 200A DIE
|
Package: Die |
Stock7,488 |
|
Die |
- |
Standard |
1200V |
200A |
2.7V @ 200A |
Fast Recovery =< 500ns, > 200mA (Io) |
360ns |
3.6µA @ 1200V |
- |
Surface Mount |
Die |
Die |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 80A TO247-3
|
Package: TO-247-3 |
Stock5,664 |
|
TO-247-3 |
- |
Standard |
600V |
80A (DC) |
2V @ 50A |
Fast Recovery =< 500ns, > 200mA (Io) |
115ns |
40µA @ 600V |
- |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER
|
Package: Die |
Stock3,984 |
|
Die |
- |
Standard |
1700V |
75A (DC) |
1.8V @ 75A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1700V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SHOCTTKY
|
Package: - |
Stock7,040 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE GEN PURP 600V 200A WAFER
|
Package: Die |
Stock2,896 |
|
Die |
- |
Standard |
600V |
200A (DC) |
1.9V @ 200A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER
|
Package: Die |
Stock4,608 |
|
Die |
- |
Standard |
600V |
30A (DC) |
1.95V @ 30A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 56A TO220-2
|
Package: TO-220-2 |
Stock16,368 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
56A (DC) |
1.8V @ 20A |
No Recovery Time > 500mA (Io) |
0ns |
123µA @ 1200V |
1050pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2-1 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2
|
Package: TO-220-2 |
Stock30,096 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
600V |
6A (DC) |
1.7V @ 6A |
No Recovery Time > 500mA (Io) |
0ns |
200µA @ 600V |
300pF @ 0V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY HS 70V 70MA SC79
|
Package: SC-79, SOD-523 |
Stock2,368 |
|
SC-79, SOD-523 |
Automotive, AEC-Q101 |
Schottky |
70V |
70mA (DC) |
1V @ 15mA |
Small Signal =< 200mA (Io), Any Speed |
100ps |
100nA @ 50V |
2pF @ 0V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SOD323-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 600V 2A TO220-2FP
|
Package: TO-220-2 Full Pack |
Stock3,360 |
|
TO-220-2 Full Pack |
thinQ!? |
Silicon Carbide Schottky |
600V |
2A (DC) |
1.9V @ 2A |
No Recovery Time > 500mA (Io) |
0ns |
15µA @ 600V |
60pF @ 1V, 1MHz |
Through Hole |
TO-220-2 Full Pack |
PG-TO220-2 Full Pack |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO263-2
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,736 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
thinQ!? |
Silicon Carbide Schottky |
650V |
5A (DC) |
1.8V @ 5A |
No Recovery Time > 500mA (Io) |
0ns |
830µA @ 650V |
160pF @ 1V, 1MHz |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO220-2
|
Package: TO-220-2 |
Stock7,920 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
16A (DC) |
1.7V @ 16A |
No Recovery Time > 500mA (Io) |
0ns |
200µA @ 650V |
470pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2-1 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock3,808 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO220-2
|
Package: TO-220-2 |
Stock6,032 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
2A (DC) |
1.7V @ 2A |
No Recovery Time > 500mA (Io) |
0ns |
35µA @ 650V |
70pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |