* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
Diode Type |
Voltage - DC Reverse (Vr) (Max) |
Current - Average Rectified (Io) |
Voltage - Forward (Vf) (Max) @ If |
Speed |
Reverse Recovery Time (trr) |
Current - Reverse Leakage @ Vr |
Capacitance @ Vr, F |
Mounting Type |
Package / Case |
Supplier Device Package |
Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2
|
Package: SC-79, SOD-523 |
Stock25,374 |
|
SC-79, SOD-523 |
- |
Schottky |
30V |
500mA (DC) |
500mV @ 500mA |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
300µA @ 30V |
15pF @ 5V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SC79-2 |
-55°C ~ 125°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER
|
Package: Die |
Stock7,280 |
|
Die |
- |
Standard |
600V |
30A (DC) |
1.6V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE GP 400V 1A SOT89
|
Package: TO-243AA |
Stock5,488 |
|
TO-243AA |
Automotive, AEC-Q101 |
Standard |
400V |
1A (DC) |
1.6V @ 1A |
Standard Recovery >500ns, > 200mA (Io) |
1µs |
1µA @ 400V |
10pF @ 0V, 1MHz |
Surface Mount |
TO-243AA |
PG-SOT89 |
150°C (Max) |
||
Infineon Technologies |
SIC DIODES
|
Package: - |
Stock2,848 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 30V 200MA TSLP-2
|
Package: SOD-882 |
Stock3,552 |
|
SOD-882 |
- |
Schottky |
30V |
200mA (DC) |
800mV @ 100mA |
Small Signal =< 200mA (Io), Any Speed |
5ns |
2µA @ 25V |
10pF @ 1V, 1MHz |
Surface Mount |
SOD-882 |
PG-TSLP-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 31A TO220-2
|
Package: TO-220-2 |
Stock4,960 |
|
TO-220-2 |
- |
Standard |
1200V |
31A (DC) |
2.15V @ 18A |
Fast Recovery =< 500ns, > 200mA (Io) |
195ns |
100µA @ 1200V |
- |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 40V SC79-2
|
Package: SC-79, SOD-523 |
Stock2,208 |
|
SC-79, SOD-523 |
- |
Schottky |
40V |
20mA (DC) |
1V @ 2mA |
Small Signal =< 200mA (Io), Any Speed |
- |
10µA @ 40V |
0.6pF @ 0V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SC79-2 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2
|
Package: SC-79, SOD-523 |
Stock225,042 |
|
SC-79, SOD-523 |
- |
Schottky |
30V |
500mA (DC) |
620mV @ 500mA |
Fast Recovery =< 500ns, > 200mA (Io) |
- |
25µA @ 30V |
10pF @ 5V, 1MHz |
Surface Mount |
SC-79, SOD-523 |
PG-SC79-2 |
-55°C ~ 125°C |
||
Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,368 |
|
TO-236-3, SC-59, SOT-23-3 |
- |
Schottky |
40V |
120mA |
750mV @ 100mA |
Small Signal =< 200mA (Io), Any Speed |
5ns |
2µA @ 30V |
6pF @ 1V, 1MHz |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
PG-SOT23-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 10A WAFER
|
Package: Die |
Stock6,864 |
|
Die |
- |
Standard |
1200V |
10A (DC) |
1.6V @ 10A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1200V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 650V 30A TO247-3
|
Package: TO-247-3 |
Stock16,968 |
|
TO-247-3 |
- |
Standard |
650V |
30A |
2.3V @ 15A |
Fast Recovery =< 500ns, > 200mA (Io) |
47ns |
40µA @ 650V |
- |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 120A TO247-3
|
Package: TO-247-3 |
Stock17,940 |
|
TO-247-3 |
- |
Standard |
600V |
120A (DC) |
2V @ 75A |
Fast Recovery =< 500ns, > 200mA (Io) |
121ns |
40µA @ 600V |
- |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER
|
Package: Die |
Stock3,456 |
|
Die |
- |
Standard |
1200V |
75A (DC) |
1.9V @ 75A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1200V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 50A WAFER
|
Package: Die |
Stock6,992 |
|
Die |
- |
Standard |
1700V |
50A (DC) |
2.15V @ 50A |
Standard Recovery >500ns, > 200mA (Io) |
- |
27µA @ 1700V |
- |
Surface Mount |
Die |
Sawn on foil |
-40°C ~ 150°C |
||
Infineon Technologies |
SIC DIODES
|
Package: - |
Stock2,944 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A DIE
|
Package: Die |
Stock5,472 |
|
Die |
- |
Standard |
1200V |
100A |
2.7V @ 100A |
Fast Recovery =< 500ns, > 200mA (Io) |
270ns |
2µA @ 1200V |
- |
Surface Mount |
Die |
Die |
-40°C ~ 150°C |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock2,896 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOD323
|
Package: SC-76, SOD-323 |
Stock85,692 |
|
SC-76, SOD-323 |
- |
Schottky |
40V |
120mA (DC) |
1V @ 40mA |
Small Signal =< 200mA (Io), Any Speed |
100ps |
1µA @ 30V |
5pF @ 0V, 1MHz |
Surface Mount |
SC-76, SOD-323 |
PG-SOD323-2 |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO220-2
|
Package: TO-220-2 |
Stock5,936 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
12A (DC) |
1.7V @ 12A |
No Recovery Time > 500mA (Io) |
0ns |
190µA @ 650V |
360pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 650V 15A TO220-2
|
Package: TO-220-2 |
Stock23,076 |
|
TO-220-2 |
- |
Standard |
650V |
15A |
2.2V @ 15A |
Fast Recovery =< 500ns, > 200mA (Io) |
47ns |
40µA @ 650V |
- |
Through Hole |
TO-220-2 |
TO-220-2 |
-40°C ~ 175°C |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
Package: - |
Stock7,664 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3
|
Package: TO-247-3 |
Stock6,064 |
|
TO-247-3 |
thinQ!? |
Silicon Carbide Schottky |
650V |
12A (DC) |
1.7V @ 12A |
No Recovery Time > 500mA (Io) |
0ns |
500µA @ 650V |
360pF @ 1V, 1MHz |
Through Hole |
TO-247-3 |
PG-TO247-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 19.3A TO263
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,672 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
- |
Standard |
600V |
19.3A (DC) |
2V @ 9A |
Fast Recovery =< 500ns, > 200mA (Io) |
75ns |
50µA @ 600V |
- |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2
|
Package: TO-220-2 |
Stock3,312 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
9A (DC) |
1.7V @ 9A |
No Recovery Time > 500mA (Io) |
0ns |
160µA @ 650V |
270pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2-1 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO220-2
|
Package: TO-220-2 |
Stock4,144 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
650V |
16A (DC) |
1.7V @ 16A |
No Recovery Time > 500mA (Io) |
0ns |
550µA @ 650V |
470pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER
|
Package: Die |
Stock4,224 |
|
Die |
- |
Standard |
600V |
20A (DC) |
1.7V @ 20A |
Fast Recovery =< 500ns, > 200mA (Io) |
150ns |
27µA @ 600V |
- |
Surface Mount |
Die |
Sawn on foil |
-55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 300V 10A TO220-2
|
Package: TO-220-2 |
Stock9,876 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
300V |
10A (DC) |
1.7V @ 10A |
No Recovery Time > 500mA (Io) |
0ns |
200µA @ 300V |
600pF @ 0V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GP 200V 250MA SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,632 |
|
TO-236-3, SC-59, SOT-23-3 |
Automotive, AEC-Q101 |
Standard |
200V |
250mA (DC) |
1V @ 100mA |
Fast Recovery =< 500ns, > 200mA (Io) |
50ns |
100nA @ 200V |
5pF @ 0V, 1MHz |
Surface Mount |
TO-236-3, SC-59, SOT-23-3 |
PG-SOT23-3 |
150°C (Max) |
||
Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO220-2
|
Package: TO-220-2 |
Stock7,920 |
|
TO-220-2 |
thinQ!? |
Silicon Carbide Schottky |
1200V |
2A (DC) |
1.8V @ 2A |
No Recovery Time > 500mA (Io) |
0ns |
48µA @ 1200V |
125pF @ 1V, 1MHz |
Through Hole |
TO-220-2 |
PG-TO220-2 |
-55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock13,518 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
- |
Standard |
1200V |
50A (DC) |
2.15V @ 30A |
Fast Recovery =< 500ns, > 200mA (Io) |
243ns |
100µA @ 1200V |
- |
Surface Mount |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
PG-TO263-3 |
-55°C ~ 150°C |