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Diodes - Rectifiers - Single

Records 584
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Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
Infineon Technologies
DIODE GEN PURP 1.2KV 23A TO220-2
Package: TO-220-2
Stock7,888
TO-220-2
-
Standard
1200V
23A (DC)
2.15V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock7,152
TO-236-3, SC-59, SOT-23-3
-
Schottky
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
100ps
1µA @ 30V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 30V 500MA SC79-2
Package: SC-79, SOD-523
Stock3,456
SC-79, SOD-523
-
Schottky
30V
500mA (DC)
620mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 30V
10pF @ 5V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
-55°C ~ 125°C
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
Package: Die
Stock2,416
Die
-
Standard
1200V
25A (DC)
2.1V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO220-2FP
Package: TO-220-2 Full Pack
Stock7,808
TO-220-2 Full Pack
thinQ!?
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 40V 200MA TSLP-2
Package: SOD-882
Stock6,720
SOD-882
-
Schottky
40V
200mA (DC)
550mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
10µA @ 40V
12pF @ 5V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 600V 75A WAFER
Package: Die
Stock6,624
Die
-
Standard
600V
75A (DC)
1.25V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock7,440
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock6,896
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO247-3
Package: TO-247-3
Stock7,568
TO-247-3
thinQ!?
Silicon Carbide Schottky
650V
16A (DC)
1.7V @ 16A
No Recovery Time > 500mA (Io)
0ns
600µA @ 650V
470pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
Package: -
Stock3,328
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 650V 60A TO220-2
Package: TO-220-2
Stock3,296
TO-220-2
-
Standard
650V
60A (DC)
2.2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
40µA @ 650V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 70V 70MA SCD80-2
Package: SC-80
Stock6,480
SC-80
-
Schottky
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
100ps
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
-55°C ~ 125°C
Infineon Technologies
DIODE GEN PURP 600V 10A WAFER
Package: Die
Stock5,072
Die
-
Standard
600V
10A (DC)
1.95V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 10A D2PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3,024
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
600V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
140µA @ 600V
480pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
Package: Die
Stock4,992
Die
-
Standard
1200V
25A (DC)
1.6V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock7,488
TO-236-3, SC-59, SOT-23-3
-
Standard
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 30V 500MA SC79-2
Package: SC-79, SOD-523
Stock7,264
SC-79, SOD-523
-
Schottky
30V
500mA (DC)
500mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 30V
15pF @ 5V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
-55°C ~ 125°C
Infineon Technologies
DIODE GEN PURP 1.2KV 2A WAFER
Package: Die
Stock5,056
Die
-
Standard
1200V
2A (DC)
2.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 30V 1A TSLP-2
Package: SOD-882
Stock122,760
SOD-882
-
Schottky
30V
1A
650mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 30V
15pF @ 5V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 650V 5A TO263-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2,864
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
thinQ!?
Silicon Carbide Schottky
650V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
830µA @ 650V
160pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 1.7KV 100A WAFER
Package: Die
Stock4,448
Die
-
Standard
1700V
100A (DC)
1.8V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE SCHOTTKY 1200V 8A TO220-2
Package: TO-220-2
Stock8,172
TO-220-2
thinQ!?
Silicon Carbide Schottky
1200V
8A (DC)
1.95V @ 8A
No Recovery Time > 500mA (Io)
0ns
40µA @ 1200V
365pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
Infineon Technologies
DIODE SCHOTTKY 600V 6A TO252-3
Package: -
Stock5,632
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 1.7KV 300A WAFER
Package: Die
Stock6,816
Die
-
Standard
1700V
300A (DC)
1.8V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
Package: TO-236-3, SC-59, SOT-23-3
Stock371,280
TO-236-3, SC-59, SOT-23-3
-
Standard
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
DIODE SCHOTTKY 600V 12A TO220-2
Package: TO-220-2
Stock32,232
TO-220-2
thinQ!?
Silicon Carbide Schottky
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
400µA @ 600V
450pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
Package: TO-236-3, SC-59, SOT-23-3
Stock3,376
TO-236-3, SC-59, SOT-23-3
-
Standard
200V
250mA (DC)
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
Infineon Technologies
SIC DIODES
Package: -
Stock3,552
-
*
-
-
-
-
-
-
-
-
-
-
-
-
Infineon Technologies
DIODE GEN PURP 650V 15A TO220-2
Package: TO-220-2
Stock6,456
TO-220-2
-
Standard
650V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
114ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C