* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
FET Type |
Technology |
Drain to Source Voltage (Vdss) |
Current - Continuous Drain (Id) @ 25°C |
Drive Voltage (Max Rds On, Min Rds On) |
Vgs(th) (Max) @ Id |
Gate Charge (Qg) (Max) @ Vgs |
Input Capacitance (Ciss) (Max) @ Vds |
Vgs (Max) |
FET Feature |
Power Dissipation (Max) |
Rds On (Max) @ Id, Vgs |
Operating Temperature |
Mounting Type |
Supplier Device Package |
Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 230MA SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock135,168 |
|
TO-236-3, SC-59, SOT-23-3 |
SIPMOS? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
230mA (Ta) |
0V, 10V |
2.4V @ 26µA |
2.9nC @ 5V |
44pF @ 25V |
±20V |
Depletion Mode |
360mW (Ta) |
3.5 Ohm @ 160mA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT23-3 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 5A SOT223
|
Package: TO-261-4, TO-261AA |
Stock93,984 |
|
TO-261-4, TO-261AA |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
5A (Tc) |
4.5V, 10V |
3V @ 250µA |
11nC @ 5V |
380pF @ 25V |
±16V |
- |
1W (Ta) |
60 mOhm @ 3A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
SOT-223 |
TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 80V 23A TDSON-8
|
Package: 8-PowerTDFN |
Stock290,982 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
80V |
7A (Ta), 23A (Tc) |
6V, 10V |
3.5V @ 12µA |
9.1nC @ 10V |
756pF @ 40V |
±20V |
- |
2.5W (Ta), 32W (Tc) |
34 mOhm @ 12A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TDSON-8 |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 55V 2A SOT223
|
Package: TO-261-4, TO-261AA |
Stock566,280 |
|
TO-261-4, TO-261AA |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
2A (Ta) |
4V, 10V |
2V @ 250µA |
14nC @ 10V |
230pF @ 25V |
±16V |
- |
1W (Ta) |
140 mOhm @ 2A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
SOT-223 |
TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 39A TDSON-8
|
Package: 8-PowerTDFN |
Stock136,380 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
12A (Ta), 39A (Tc) |
4.5V, 10V |
2.2V @ 250µA |
15nC @ 10V |
1200pF @ 15V |
±20V |
- |
2.5W (Ta), 28W (Tc) |
12 mOhm @ 30A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TDSON-8 |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 39A TDSON-8
|
Package: 8-PowerTDFN |
Stock245,304 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
11A (Ta), 39A (Tc) |
4.5V, 10V |
2V @ 250µA |
20nC @ 10V |
1500pF @ 15V |
±20V |
- |
2.5W (Ta), 28W (Tc) |
12 mOhm @ 30A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TDSON-8 |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 80V 23A TSDSON-8
|
Package: 8-PowerTDFN |
Stock45,438 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
80V |
6A (Ta), 23A (Tc) |
6V, 10V |
3.5V @ 12µA |
9.1nC @ 10V |
630pF @ 40V |
±20V |
- |
2.1W (Ta), 32W (Tc) |
34 mOhm @ 12A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TSDSON-8 |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 9.9A 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock465,732 |
|
8-SOIC (0.154", 3.90mm Width) |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
9.9A (Ta) |
2.5V, 4.5V |
1.1V @ 10µA |
11nC @ 4.5V |
1025pF @ 25V |
±12V |
- |
2.5W (Ta) |
14.6 mOhm @ 9.9A, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SO |
8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 40V 3.6A SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,949,316 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
40V |
3.6A (Ta) |
4.5V, 10V |
2.5V @ 25µA |
3.9nC @ 4.5V |
266pF @ 25V |
±16V |
- |
1.3W (Ta) |
56 mOhm @ 3.6A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 250V 100MA SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock321,282 |
|
TO-236-3, SC-59, SOT-23-3 |
SIPMOS? |
N-Channel |
MOSFET (Metal Oxide) |
250V |
100mA (Ta) |
0V, 10V |
1V @ 56µA |
3.5nC @ 5V |
76pF @ 25V |
±20V |
Depletion Mode |
360mW (Ta) |
14 Ohm @ 100µA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT23-3 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 5A SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,762,204 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
5A (Ta) |
2.5V, 4.5V |
1.1V @ 10µA |
6.8nC @ 4.5V |
650pF @ 25V |
±12V |
- |
1.3W (Ta) |
29 mOhm @ 5A, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock9,491,748 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
20V |
4.2A (Ta) |
2.5V, 4.5V |
1.2V @ 250µA |
12nC @ 5V |
740pF @ 15V |
±12V |
- |
1.25W (Ta) |
45 mOhm @ 4.2A, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 30V 760MA SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock10,369,716 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
30V |
760mA (Ta) |
4.5V, 10V |
1V @ 250µA |
5.1nC @ 10V |
75pF @ 25V |
±20V |
- |
540mW (Ta) |
600 mOhm @ 600mA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 20V 780MA SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock10,860,804 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
20V |
780mA (Ta) |
2.7V, 4.5V |
1.5V @ 250µA |
3.6nC @ 4.45V |
97pF @ 15V |
±12V |
- |
540mW (Ta) |
600 mOhm @ 610mA, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock300,600 |
|
TO-236-3, SC-59, SOT-23-3 |
SIPMOS? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
170mA (Ta) |
0V, 10V |
1.8V @ 50µA |
2.8nC @ 7V |
68pF @ 25V |
±20V |
Depletion Mode |
360mW (Ta) |
6 Ohm @ 170mA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT23-3 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 30V 3A SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock14,381,352 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
30V |
3A (Ta) |
4.5V, 10V |
2.5V @ 250µA |
14nC @ 10V |
510pF @ 25V |
±20V |
- |
1.25W (Ta) |
98 mOhm @ 3A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 12V 4.3A SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock25,991,016 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
12V |
4.3A (Ta) |
1.8V, 4.5V |
950mV @ 250µA |
15nC @ 5V |
830pF @ 10V |
±8V |
- |
1.3W (Ta) |
50 mOhm @ 4.3A, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 1.2A SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,255,508 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
1.2A (Ta) |
4.5V, 10V |
2.5V @ 25µA |
0.67nC @ 4.5V |
64pF @ 25V |
±16V |
- |
1.25W (Ta) |
480 mOhm @ 1.2A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 2.7A SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,539,984 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
2.7A (Ta) |
4.5V, 10V |
2.5V @ 25µA |
2.5nC @ 4.5V |
290pF @ 25V |
±16V |
- |
1.25W (Ta) |
92 mOhm @ 2.7A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 1.2A SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,922,408 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
20V |
1.2A (Ta) |
2.7V, 4.5V |
700mV @ 250µA |
3.9nC @ 4.5V |
110pF @ 15V |
±12V |
- |
540mW (Ta) |
250 mOhm @ 930mA, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock15,000,588 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
20V |
3.7A (Ta) |
2.5V, 4.5V |
1.2V @ 250µA |
12nC @ 5V |
633pF @ 10V |
±12V |
- |
1.3W (Ta) |
65 mOhm @ 3.7A, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 3.4A SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,825,616 |
|
TO-236-3, SC-59, SOT-23-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
3.4A (Ta) |
2.5V, 4.5V |
1.1V @ 10µA |
2.9nC @ 4.5V |
270pF @ 24V |
±12V |
- |
1.3W (Ta) |
63 mOhm @ 3.4A, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
Micro3?/SOT-23 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 30V 2A SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock665,502 |
|
TO-236-3, SC-59, SOT-23-3 |
OptiMOS? |
P-Channel |
MOSFET (Metal Oxide) |
30V |
2A (Ta) |
4.5V, 10V |
2V @ 11µA |
5nC @ 10V |
500pF @ 15V |
±20V |
- |
500mW (Ta) |
80 mOhm @ 2A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT23-3 |
TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET P-CH 60V 0.33A SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock563,880 |
|
TO-236-3, SC-59, SOT-23-3 |
SIPMOS? |
P-Channel |
MOSFET (Metal Oxide) |
60V |
330mA (Ta) |
4.5V, 10V |
2V @ 80µA |
3.57nC @ 10V |
78pF @ 25V |
±20V |
- |
360mW (Ta) |
2 Ohm @ 330mA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT23-3 |
TO-236-3, SC-59, SOT-23-3 |