* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
FET Type |
Technology |
Drain to Source Voltage (Vdss) |
Current - Continuous Drain (Id) @ 25°C |
Drive Voltage (Max Rds On, Min Rds On) |
Vgs(th) (Max) @ Id |
Gate Charge (Qg) (Max) @ Vgs |
Input Capacitance (Ciss) (Max) @ Vds |
Vgs (Max) |
FET Feature |
Power Dissipation (Max) |
Rds On (Max) @ Id, Vgs |
Operating Temperature |
Mounting Type |
Supplier Device Package |
Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB
|
Package: TO-220-3 |
Stock89,208 |
|
TO-220-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
40V |
75A (Tc) |
10V |
4V @ 250µA |
150nC @ 10V |
4340pF @ 25V |
±20V |
- |
200W (Tc) |
3.7 mOhm @ 75A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK
|
Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock5,920 |
|
TO-263-7, D2Pak (6 Leads + Tab) |
HEXFET?, StrongIRFET? |
N-Channel |
MOSFET (Metal Oxide) |
40V |
240A (Tc) |
6V, 10V |
3.9V @ 250µA |
460nC @ 10V |
13975pF @ 25V |
±20V |
- |
375W (Tc) |
0.75 mOhm @ 100A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK (7-Lead) |
TO-263-7, D2Pak (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock92,400 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
40V |
195A (Tc) |
4.5V, 10V |
2.5V @ 250µA |
162nC @ 4.5V |
10315pF @ 25V |
±20V |
- |
375W (Tc) |
1.7 mOhm @ 195A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 800V 6A TO220FP
|
Package: TO-220-3 Full Pack |
Stock533,304 |
|
TO-220-3 Full Pack |
CoolMOS? |
N-Channel |
MOSFET (Metal Oxide) |
800V |
6A (Tc) |
10V |
3.9V @ 250µA |
41nC @ 10V |
785pF @ 100V |
±20V |
- |
39W (Tc) |
900 mOhm @ 3.8A, 10V |
-55°C ~ 150°C (TJ) |
Through Hole |
PG-TO220-FP |
TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET P-CH 55V 74A TO-220AB
|
Package: TO-220-3 |
Stock473,952 |
|
TO-220-3 |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
55V |
74A (Tc) |
10V |
4V @ 250µA |
180nC @ 10V |
3400pF @ 25V |
±20V |
- |
200W (Tc) |
20 mOhm @ 38A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 30A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock390,468 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
80V |
30A (Tc) |
4.5V, 10V |
2.5V @ 250µA |
33nC @ 4.5V |
1890pF @ 25V |
±16V |
- |
120W (Tc) |
28 mOhm @ 23A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D-Pak |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 40V 10.5A 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,304 |
|
8-SOIC (0.154", 3.90mm Width) |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
40V |
10.5A (Ta) |
4.5V, 10V |
3V @ 250µA |
110nC @ 10V |
9250pF @ 25V |
±20V |
- |
2.5W (Ta) |
15 mOhm @ 10.5A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SO |
8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 42A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock450,492 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
42A (Tc) |
4.5V, 10V |
2.5V @ 100µA |
48nC @ 4.5V |
3980pF @ 25V |
±16V |
- |
140W (Tc) |
14 mOhm @ 38A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D-Pak |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 60V 80A TO-263
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390,000 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
SIPMOS? |
P-Channel |
MOSFET (Metal Oxide) |
60V |
80A (Tc) |
10V |
4V @ 5.5mA |
173nC @ 10V |
5033pF @ 25V |
±20V |
- |
340W (Tc) |
23 mOhm @ 64A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
PG-TO263-3-2 |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 260A TO-220AB
|
Package: TO-220-3 |
Stock4,656 |
|
TO-220-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
260A (Tc) |
4.5V, 10V |
2.35V @ 150µA |
86nC @ 4.5V |
8420pF @ 15V |
±20V |
- |
230W (Tc) |
1.95 mOhm @ 60A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock23,274 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
51A (Tc) |
10V |
4V @ 250µA |
43nC @ 10V |
1420pF @ 25V |
±20V |
- |
80W (Tc) |
13.9 mOhm @ 31A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 150V 33A IPAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,160 |
|
TO-251-3 Short Leads, IPak, TO-251AA |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
150V |
33A (Tc) |
10V |
5V @ 100µA |
26nC @ 10V |
1750pF @ 50V |
±20V |
- |
144W (Tc) |
42 mOhm @ 21A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
IPAK (TO-251) |
TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 200V 18A TO-220AB
|
Package: TO-220-3 |
Stock6,784 |
|
TO-220-3 |
- |
N-Channel |
MOSFET (Metal Oxide) |
200V |
18A (Tc) |
10V |
4.9V @ 100µA |
29nC @ 10V |
1200pF @ 50V |
±20V |
- |
100W (Tc) |
100 mOhm @ 11A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock14,736 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
42A (Tc) |
4.5V, 10V |
3V @ 250µA |
66nC @ 5V |
2900pF @ 25V |
±16V |
- |
130W (Tc) |
8 mOhm @ 42A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D-Pak |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 150V 27A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock154,536 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
150V |
27A (Tc) |
10V |
5V @ 250µA |
110nC @ 10V |
2210pF @ 25V |
±20V |
- |
250W (Tc) |
150 mOhm @ 16A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8
|
Package: 8-PowerTDFN |
Stock262,650 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
17A (Ta), 100A (Tc) |
6V, 10V |
3.5V @ 120µA |
63nC @ 10V |
4500pF @ 50V |
±20V |
- |
156W (Tc) |
4.6 mOhm @ 50A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TDSON-8 |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 100V 10.3A DIRECTFET
|
Package: DirectFET? Isometric MN |
Stock22,188 |
|
DirectFET? Isometric MN |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
10.3A (Ta), 60A (Tc) |
10V |
4.8V @ 150µA |
47nC @ 10V |
2210pF @ 25V |
±20V |
- |
2.8W (Ta), 89W (Tc) |
13 mOhm @ 10.3A, 10V |
-40°C ~ 150°C (TJ) |
Surface Mount |
DIRECTFET? MN |
DirectFET? Isometric MN |
||
Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET MT
|
Package: DirectFET? Isometric MT |
Stock33,324 |
|
DirectFET? Isometric MT |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
34A (Ta), 192A (Tc) |
4.5V, 10V |
2.35V @ 150µA |
77nC @ 4.5V |
6140pF @ 15V |
±20V |
- |
2.8W (Ta), 89W (Tc) |
1.5 mOhm @ 32A, 10V |
-40°C ~ 150°C (TJ) |
Surface Mount |
DIRECTFET? MT |
DirectFET? Isometric MT |
||
Infineon Technologies |
MOSFET N-CH 200V 34A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock18,168 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
200V |
34A (Tc) |
10V |
4V @ 90µA |
29nC @ 10V |
2350pF @ 100V |
±20V |
- |
136W (Tc) |
32 mOhm @ 34A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
PG-TO263-2 |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 78A TO220AB
|
Package: TO-220-3 |
Stock22,152 |
|
TO-220-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
78A (Tc) |
4.5V, 10V |
2.35V @ 100µA |
54nC @ 4.5V |
5110pF @ 15V |
±20V |
- |
140W (Tc) |
3.2 mOhm @ 40A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 30A TDSON-8
|
Package: 8-PowerTDFN |
Stock236,502 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
30A (Ta), 100A (Tc) |
6V, 10V |
2.8V @ 120µA |
89nC @ 10V |
6500pF @ 30V |
±20V |
- |
2.5W (Ta), 156W (Tc) |
1.45 mOhm @ 50A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TDSON-8 |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 75V 100A TDSON-8
|
Package: 8-PowerTDFN |
Stock43,674 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
75V |
100A (Tc) |
10V |
3.8V @ 110µA |
63.4nC @ 10V |
4400pF @ 37.5V |
±20V |
- |
2.5W (Ta), 156W (Tc) |
3.6 mOhm @ 50A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TDSON-8 |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 55V 110A TO-220AB
|
Package: TO-220-3 |
Stock181,932 |
|
TO-220-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
110A (Tc) |
10V |
4V @ 250µA |
146nC @ 10V |
3247pF @ 25V |
±20V |
- |
200W (Tc) |
8 mOhm @ 62A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 80A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock31,296 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
75V |
80A (Tc) |
4.5V, 10V |
2V @ 250µA |
233nC @ 10V |
5400pF @ 25V |
±20V |
- |
300W (Tc) |
6.8 mOhm @ 80A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
PG-TO263-3-2 |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 250V 25A TDSON-8
|
Package: 8-PowerTDFN |
Stock36,000 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
250V |
25A (Tc) |
10V |
4V @ 90µA |
29nC @ 10V |
2350pF @ 100V |
±20V |
- |
125W (Tc) |
60 mOhm @ 25A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TDSON-8 |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 100V 160A TO263-7
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock33,594 |
|
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
160A (Tc) |
6V, 10V |
3.5V @ 160µA |
117nC @ 10V |
8410pF @ 50V |
±20V |
- |
214W (Tc) |
3.9 mOhm @ 100A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
PG-TO263-7 |
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX
|
Package: DirectFET? Isometric MX |
Stock172,800 |
|
DirectFET? Isometric MX |
HEXFET?, StrongIRFET? |
N-Channel |
MOSFET (Metal Oxide) |
40V |
90A (Tc) |
6V, 10V |
3.9V @ 150µA |
212nC @ 10V |
6852pF @ 25V |
±20V |
- |
96W (Tc) |
1.4 mOhm @ 90A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
DIRECTFET? MX |
DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 100V 36A TO-220AB
|
Package: TO-220-3 |
Stock144,672 |
|
TO-220-3 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
36A (Tc) |
4V, 10V |
2V @ 250µA |
74nC @ 5V |
1800pF @ 25V |
±16V |
- |
140W (Tc) |
44 mOhm @ 18A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
TO-220AB |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 150V 50A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock23,880 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
150V |
50A (Tc) |
8V, 10V |
4V @ 90µA |
31nC @ 10V |
1820pF @ 75V |
±20V |
- |
150W (Tc) |
20 mOhm @ 50A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
PG-TO263-2 |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 37A 8TDSON
|
Package: 8-PowerTDFN |
Stock153,774 |
|
8-PowerTDFN |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
40V |
37A (Ta), 100A (Tc) |
4.5V, 10V |
2V @ 250µA |
87nC @ 10V |
6200pF @ 20V |
±20V |
Schottky Diode (Body) |
2.5W (Ta), 139W (Tc) |
1.05 mOhm @ 50A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TDSON-8 FL |
8-PowerTDFN |