* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
FET Type |
Technology |
Drain to Source Voltage (Vdss) |
Current - Continuous Drain (Id) @ 25°C |
Drive Voltage (Max Rds On, Min Rds On) |
Vgs(th) (Max) @ Id |
Gate Charge (Qg) (Max) @ Vgs |
Input Capacitance (Ciss) (Max) @ Vds |
Vgs (Max) |
FET Feature |
Power Dissipation (Max) |
Rds On (Max) @ Id, Vgs |
Operating Temperature |
Mounting Type |
Supplier Device Package |
Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH WAFER
|
Package: - |
Stock4,880 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH WAFER
|
Package: - |
Stock4,032 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH WAFER
|
Package: - |
Stock6,224 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH WAFER
|
Package: - |
Stock3,232 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH WAFER
|
Package: - |
Stock4,240 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH WAFER
|
Package: - |
Stock6,384 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 16SOIC
|
Package: - |
Stock6,832 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 16SOIC
|
Package: - |
Stock7,008 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH TO-220AB
|
Package: - |
Stock2,256 |
|
- |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
120A |
10V |
4V @ 150µA |
120nC @ 10V |
4520pF @ 50V |
±20V |
- |
230W (Tc) |
4.2 mOhm @ 75A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
- |
- |
||
Infineon Technologies |
MOSFET NCH 600V 10.6A TO252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,944 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
CoolMOS? |
N-Channel |
MOSFET (Metal Oxide) |
600V |
10.6A (Tc) |
10V |
3.5V @ 300µA |
32nC @ 10V |
700pF @ 100V |
±20V |
Super Junction |
83W (Tc) |
380 mOhm @ 3.8A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TO252-3 |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET NCH 600V 3.2A TO251
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,664 |
|
TO-251-3 Short Leads, IPak, TO-251AA |
CoolMOS? |
N-Channel |
MOSFET (Metal Oxide) |
600V |
3.2A (Tc) |
10V |
3.5V @ 90µA |
9.4nC @ 10V |
200pF @ 100V |
±20V |
Super Junction |
28.4W (Tc) |
1.4 Ohm @ 1.1A, 10V |
-55°C ~ 155°C (TJ) |
Through Hole |
PG-TO251 |
TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET NCH 600V 10.6A TO252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,480 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
CoolMOS? |
N-Channel |
MOSFET (Metal Oxide) |
600V |
10.6A (Tc) |
10V |
3.5V @ 300µA |
32nC @ 10V |
700pF @ 100V |
±20V |
Super Junction |
83W (Tc) |
380 mOhm @ 3.8A, 10V |
-55°C ~ 155°C (TJ) |
Surface Mount |
PG-TO252-3 |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC
|
Package: 8-SOIC |
Stock3,088 |
|
8-SOIC |
- |
N-Channel |
MOSFET (Metal Oxide) |
30V |
19A (Ta) |
10V |
2.25V @ 250µA |
44nC @ 4.5V |
3710pF @ 15V |
±20V |
- |
2.5W |
4.5 mOhm @ 19A, 10V |
-55°C ~ 150°C (TA) |
Surface Mount |
- |
8-SOIC |
||
Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC
|
Package: 8-SOIC |
Stock3,456 |
|
8-SOIC |
- |
N-Channel |
MOSFET (Metal Oxide) |
20V |
10A (Ta), 12A (Tc) |
10V |
2.55V @ 250µA |
11nC @ 4.5V |
900pF @ 10V |
- |
- |
2W |
13.4 mOhm @ 10A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
- |
8-SOIC |
||
Infineon Technologies |
MOSFET NCH 100V 23A PQFN
|
Package: 8-PowerTDFN |
Stock6,432 |
|
8-PowerTDFN |
FASTIRFET?, HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
23A (Ta), 157A (Tc) |
10V |
3.6V @ 250µA |
74nC @ 10V |
3120pF @ 50V |
±20V |
- |
4W (Ta), 195W (Tc) |
3.9 mOhm @ 50A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-PQFN (5x6) |
8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 100V DIE ON WAFER
|
Package: - |
Stock3,936 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 100V DIE ON FILM
|
Package: - |
Stock3,424 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 150V DIE ON WAFER
|
Package: - |
Stock4,000 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 100V DIE ON WAFER
|
Package: - |
Stock3,488 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 60V DIE ON WAFER
|
Package: - |
Stock7,728 |
|
- |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET P-CH 55V 11A DPAK
|
Package: - |
Stock4,000 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK
|
Package: - |
Stock5,328 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 100V TO-220AB
|
Package: - |
Stock3,120 |
|
- |
- |
- |
- |
- |
- |
4V, 10V |
- |
- |
- |
±16V |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 40V DIRECTFETL8
|
Package: - |
Stock3,568 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET N-CH 60V DIRECTFETL8
|
Package: - |
Stock3,984 |
|
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
||
Infineon Technologies |
MOSFET P-CH TO220-3
|
Package: TO-220-3 |
Stock3,488 |
|
TO-220-3 |
Automotive, AEC-Q101, OptiMOS? |
P-Channel |
MOSFET (Metal Oxide) |
40V |
80A (Tc) |
10V |
4V @ 250µA |
151nC @ 10V |
10300pF @ 25V |
±20V |
- |
125W (Tc) |
5.2 mOhm @ 80A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO220-3-1 |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH TO220-3
|
Package: TO-220-3 |
Stock3,776 |
|
TO-220-3 |
Automotive, AEC-Q101, OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
80A (Tc) |
4.5V, 10V |
2.2V @ 60µA |
110nC @ 10V |
8180pF @ 25V |
±16V |
- |
107W (Tc) |
8.5 mOhm @ 40A, 4.5V |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO220-3-1 |
TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH TO220-3
|
Package: TO-220-3 |
Stock4,880 |
|
TO-220-3 |
Automotive, AEC-Q101, OptiMOS? |
P-Channel |
MOSFET (Metal Oxide) |
40V |
72A (Tc) |
10V |
4V @ 120µA |
70nC @ 10V |
4810pF @ 25V |
±20V |
- |
75W (Tc) |
9.4 mOhm @ 70A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO220-3 |
TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH TO262-3
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,144 |
|
TO-262-3 Long Leads, I2Pak, TO-262AA |
Automotive, AEC-Q101, OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
80A (Tc) |
4.5V, 10V |
2.2V @ 60µA |
110nC @ 10V |
8180pF @ 25V |
±16V |
- |
107W (Tc) |
8.5 mOhm @ 40A, 4.5V |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO262-3-1 |
TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH TO262-3
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,792 |
|
TO-262-3 Long Leads, I2Pak, TO-262AA |
Automotive, AEC-Q101, OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
120A (Tc) |
10V |
4V @ 200µA |
270nC @ 10V |
21900pF @ 25V |
±20V |
- |
250W (Tc) |
2.4 mOhm @ 100A, 10V |
-55°C ~ 175°C (TJ) |
Through Hole |
PG-TO262-3-1 |
TO-262-3 Long Leads, I2Pak, TO-262AA |