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* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
FET Type |
Technology |
Drain to Source Voltage (Vdss) |
Current - Continuous Drain (Id) @ 25°C |
Drive Voltage (Max Rds On, Min Rds On) |
Vgs(th) (Max) @ Id |
Gate Charge (Qg) (Max) @ Vgs |
Input Capacitance (Ciss) (Max) @ Vds |
Vgs (Max) |
FET Feature |
Power Dissipation (Max) |
Rds On (Max) @ Id, Vgs |
Operating Temperature |
Mounting Type |
Supplier Device Package |
Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT-223
|
Package: TO-261-4, TO-261AA |
Stock165,960 |
|
TO-261-4, TO-261AA |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
2.8A (Ta) |
10V |
4V @ 250µA |
18.3nC @ 10V |
400pF @ 25V |
±20V |
- |
1W (Ta) |
75 mOhm @ 2.8A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
SOT-223 |
TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 1.5A SOT-223
|
Package: TO-261-4, TO-261AA |
Stock320,100 |
|
TO-261-4, TO-261AA |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
1.5A (Ta) |
10V |
4V @ 250µA |
11nC @ 10V |
190pF @ 25V |
±20V |
- |
1W (Ta) |
160 mOhm @ 1.9A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
SOT-223 |
TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 7A 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock246,708 |
|
8-SOIC (0.154", 3.90mm Width) |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
7A (Ta) |
4.5V, 10V |
3V @ 250µA |
31nC @ 4.5V |
1740pF @ 25V |
±20V |
- |
2.5W (Ta) |
26 mOhm @ 4.2A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SO |
8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 5.4A 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,000 |
|
8-SOIC (0.154", 3.90mm Width) |
HEXFET? |
P-Channel |
MOSFET (Metal Oxide) |
20V |
5.4A (Ta) |
2.7V, 4.5V |
1.6V @ 250µA |
22nC @ 4.5V |
780pF @ 15V |
±12V |
- |
2.5W (Ta) |
60 mOhm @ 5.4A, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SO |
8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 106A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,944 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
75V |
106A (Tc) |
10V |
4V @ 250µA |
220nC @ 10V |
5310pF @ 25V |
±20V |
- |
200W (Tc) |
7 mOhm @ 82A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,256 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
150V |
21A (Tc) |
10V |
4V @ 250µA |
95nC @ 10V |
1300pF @ 25V |
±20V |
- |
3.8W (Ta), 94W (Tc) |
82 mOhm @ 12A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 235A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,368 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
160A (Tc) |
10V |
4V @ 150µA |
240nC @ 10V |
6320pF @ 25V |
±20V |
- |
231W (Tc) |
2.4 mOhm @ 75A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 135A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,456 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
135A (Tc) |
10V |
4V @ 250µA |
230nC @ 10V |
5110pF @ 25V |
±20V |
- |
200W (Tc) |
4.7 mOhm @ 104A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 202A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock10,392 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
40V |
75A (Tc) |
10V |
4V @ 250µA |
200nC @ 10V |
7360pF @ 25V |
±20V |
- |
3.8W (Ta), 200W (Tc) |
4 mOhm @ 95A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 79A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock108,120 |
|
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
79A (Tc) |
10V |
4V @ 100µA |
69nC @ 10V |
2290pF @ 50V |
±20V |
- |
110W (Tc) |
8.4 mOhm @ 47A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D2PAK |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 4.2A 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock158,328 |
|
8-SOIC (0.154", 3.90mm Width) |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
20V |
4.2A (Ta) |
- |
700mV @ 250µA |
7.5nC @ 4.5V |
310pF @ 15V |
- |
- |
- |
85 mOhm @ 4A, 4.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SO |
8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK
|
Package: - |
Stock7,712 |
|
- |
- |
- |
- |
- |
- |
4.5V, 10V |
- |
- |
- |
±16V |
- |
- |
- |
-55°C ~ 175°C (TJ) |
Surface Mount |
- |
- |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,888 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
55V |
17A (Tc) |
10V |
4V @ 250µA |
20nC @ 10V |
370pF @ 25V |
±20V |
- |
3.8W (Ta), 45W (Tc) |
70 mOhm @ 10A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D-PAK (TO-252AA) |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX
|
Package: DirectFET? Isometric MX |
Stock6,096 |
|
DirectFET? Isometric MX |
HEXFET?, StrongIRFET? |
N-Channel |
MOSFET (Metal Oxide) |
40V |
90A (Tc) |
6V, 10V |
3.9V @ 150µA |
212nC @ 10V |
6852pF @ 25V |
±20V |
- |
96W (Tc) |
1.4 mOhm @ 90A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
DIRECTFET? MX |
DirectFET? Isometric MX |
|
|
|
Infineon Technologies |
MOSFET N CH 100V 56A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock463,248 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
HEXFET? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
56A (Tc) |
10V |
4V @ 100µA |
81nC @ 10V |
3031pF @ 50V |
±20V |
- |
143W (Tc) |
13.9 mOhm @ 38A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
D-Pak |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,936 |
|
TO-236-3, SC-59, SOT-23-3 |
SIPMOS? |
N-Channel |
MOSFET (Metal Oxide) |
100V |
170mA (Ta) |
0V, 10V |
1.8V @ 50µA |
2.8nC @ 7V |
68pF @ 25V |
±20V |
Depletion Mode |
360mW (Ta) |
6 Ohm @ 170mA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT23-3 |
TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,000 |
|
TO-236-3, SC-59, SOT-23-3 |
SIPMOS? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
230mA (Ta) |
0V, 10V |
2.4V @ 26µA |
2.9nC @ 5V |
44pF @ 25V |
±20V |
Depletion Mode |
360mW (Ta) |
3.5 Ohm @ 160mA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT23-3 |
TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 400V 170MA SOT-223
|
Package: TO-261-4, TO-261AA |
Stock4,064 |
|
TO-261-4, TO-261AA |
SIPMOS? |
N-Channel |
MOSFET (Metal Oxide) |
400V |
170mA (Ta) |
4.5V, 10V |
2.3V @ 94µA |
5.9nC @ 10V |
154pF @ 25V |
±20V |
- |
1.8W (Ta) |
25 Ohm @ 170mA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT223-4 |
TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223
|
Package: TO-261-4, TO-261AA |
Stock4,048 |
|
TO-261-4, TO-261AA |
SIPMOS? |
N-Channel |
MOSFET (Metal Oxide) |
60V |
2.9A (Ta) |
10V |
4V @ 20µA |
12nC @ 10V |
340pF @ 25V |
±20V |
- |
1.8W (Ta) |
120 mOhm @ 2.9A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT223-4 |
TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 400MA SOT-223
|
Package: TO-261-4, TO-261AA |
Stock7,952 |
|
TO-261-4, TO-261AA |
SIPMOS? |
N-Channel |
MOSFET (Metal Oxide) |
500V |
400mA (Ta) |
10V |
4V @ 1mA |
- |
400pF @ 25V |
±20V |
- |
1.8W (Ta) |
4 Ohm @ 400mA, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT223-4 |
TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 60A 2WDSON
|
Package: 3-WDSON |
Stock2,432 |
|
3-WDSON |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
15A (Ta), 60A (Tc) |
4.5V, 10V |
2.2V @ 250µA |
42nC @ 10V |
3000pF @ 15V |
±20V |
- |
2.2W (Ta), 28W (Tc) |
5 mOhm @ 20A, 10V |
-40°C ~ 150°C (TJ) |
Surface Mount |
MG-WDSON-2, CanPAK M? |
3-WDSON |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT363
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock7,744 |
|
6-VSSOP, SC-88, SOT-363 |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
20V |
1.4A (Ta) |
1.8V, 2.5V |
950mV @ 3.7µA |
0.6nC @ 2.5V |
180pF @ 10V |
±8V |
- |
500mW (Ta) |
160 mOhm @ 1.4A, 2.5V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT363-6 |
6-VSSOP, SC-88, SOT-363 |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 1.5A SOT363
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock3,472 |
|
6-VSSOP, SC-88, SOT-363 |
OptiMOS? |
P-Channel |
MOSFET (Metal Oxide) |
30V |
1.5A (Ta) |
4.5V, 10V |
2V @ 6.3µA |
2.9nC @ 10V |
294pF @ 15V |
±20V |
- |
500mW (Ta) |
140 mOhm @ 1.5A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-SOT363-6 |
6-VSSOP, SC-88, SOT-363 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 147A 2WDSON
|
Package: 3-WDSON |
Stock6,384 |
|
3-WDSON |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
32A (Ta), 147A (Tc) |
4.5V, 10V |
2.2V @ 250µA |
102nC @ 10V |
7800pF @ 15V |
±20V |
- |
2.8W (Ta), 57W (Tc) |
1.7 mOhm @ 30A, 10V |
-40°C ~ 150°C (TJ) |
Surface Mount |
MG-WDSON-2, CanPAK M? |
3-WDSON |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 170A WDSON-2
|
Package: 3-WDSON |
Stock21,480 |
|
3-WDSON |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
25V |
37A (Ta), 170A (Tc) |
4.5V, 10V |
2V @ 250µA |
67nC @ 10V |
4900pF @ 12V |
±20V |
- |
2.8W (Ta), 57W (Tc) |
1.2 mOhm @ 30A, 10V |
-40°C ~ 150°C (TJ) |
Surface Mount |
MG-WDSON-2, CanPAK M? |
3-WDSON |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 180A 2WDSON
|
Package: 3-WDSON |
Stock3,520 |
|
3-WDSON |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
39A (Ta), 180A (Tc) |
4.5V, 10V |
2.2V @ 250µA |
169nC @ 10V |
16900pF @ 15V |
±20V |
- |
2.8W (Ta), 89W (Tc) |
1.2 mOhm @ 30A, 10V |
-40°C ~ 150°C (TJ) |
Surface Mount |
MG-WDSON-2, CanPAK M? |
3-WDSON |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,328 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
50A (Tc) |
10V |
4V @ 85µA |
46.5nC @ 10V |
2170pF @ 25V |
±20V |
- |
136W (Tc) |
7.3 mOhm @ 50A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
PG-TO252-3 |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,968 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
OptiMOS? |
N-Channel |
MOSFET (Metal Oxide) |
30V |
30A (Tc) |
4.5V, 10V |
2V @ 23µA |
19nC @ 10V |
700pF @ 25V |
±20V |
- |
60W (Tc) |
20 mOhm @ 18A, 10V |
-55°C ~ 175°C (TJ) |
Surface Mount |
PG-TO252-3 |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 6.1A TO-252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,256 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
CoolMOS? |
N-Channel |
MOSFET (Metal Oxide) |
600V |
6.1A (Tc) |
10V |
3.5V @ 220µA |
27nC @ 10V |
550pF @ 100V |
±20V |
- |
60W (Tc) |
600 mOhm @ 3.3A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TO252-3 |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 6.8A TO-252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,168 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
CoolMOS? |
N-Channel |
MOSFET (Metal Oxide) |
600V |
6.8A (Tc) |
10V |
3.5V @ 250µA |
31nC @ 10V |
630pF @ 100V |
±20V |
- |
66W (Tc) |
520 mOhm @ 3.8A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
PG-TO252-3 |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
