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Transistors - IGBTs - Single

Records 5
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Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
Toshiba Semiconductor and Storage
IGBT 600V 50A 240W TO3P LH
Package: TO-3PL
Stock4,736
TO-3PL
-
-
600V
50A
100A
2.45V @ 15V, 50A
240W
1.3mJ (on), 1.34mJ (off)
Standard
-
90ns/300ns
300V, 50A, 13 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3PL
TO-3P(LH)
Toshiba Semiconductor and Storage
IGBT 400V 600MW 8TSSOP
Package: 8-TSSOP (0.173", 4.40mm Width)
Stock2,100
8-TSSOP (0.173", 4.40mm Width)
-
-
400V
-
150A
2.9V @ 4V, 150A
600mW
-
Standard
-
1.7µs/2µs
-
-
150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
Toshiba Semiconductor and Storage
IGBT 1000V 60A 170W TO3P LH
Package: TO-3PL
Stock22,140
TO-3PL
-
-
1000V
60A
120A
2.8V @ 15V, 60A
170W
-
Standard
-
330ns/700ns
-
2.5µs
150°C (TJ)
Through Hole
TO-3PL
TO-3P(LH)
Toshiba Semiconductor and Storage
IGBT 600V 10A 60W TO220SM
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock2,992
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-
600V
10A
20A
2.7V @ 15V, 10A
60W
-
Standard
-
400ns/400ns
300V, 10A, 100 Ohm, 15V
200ns
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-220SM
Toshiba Semiconductor and Storage
IGBT 400V 1W 8-SOIC
Package: 8-SOIC (0.173", 4.40mm Width)
Stock2,432
8-SOIC (0.173", 4.40mm Width)
-
-
400V
-
200A
2.3V @ 4V, 200A
1W
-
Standard
-
3.1µs/2µs
-
-
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)