* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
Driven Configuration |
Channel Type |
Number of Drivers |
Gate Type |
Voltage - Supply |
Logic Voltage - VIL, VIH |
Current - Peak Output (Source, Sink) |
Input Type |
High Side Voltage - Max (Bootstrap) |
Rise / Fall Time (Typ) |
Operating Temperature |
Mounting Type |
Package / Case |
Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS Integrated Circuits Division |
14A 5LEAD TO-263 NON INVERTING
|
Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Stock3,760 |
|
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Non-Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
TO-263-5 |
||
IXYS Integrated Circuits Division |
14A 5 LEAD TO-263 INVERTING
|
Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Stock2,656 |
|
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
TO-263-5 |
||
IXYS Integrated Circuits Division |
14A 5 PIN TO-220 INVERTING
|
Package: TO-220-5 Formed Leads |
Stock2,064 |
|
TO-220-5 Formed Leads |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-5 Formed Leads |
TO-220-5 |
||
IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INVERTING
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock56,796 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Non-Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8LEAD SOIC EXP MTL INVERTING
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock39,576 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INV W/ENAB
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock41,880 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Non-Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INVERTING
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,152 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Non-Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8LEAD SOIC EXP MTL INVERTING
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock6,224 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INV W/ENAB
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock5,264 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Non-Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS |
IC MOSF DRIVER FAST DUAL 6-DFN
|
Package: 6-VDFN Exposed Pad |
Stock7,632 |
|
6-VDFN Exposed Pad |
- |
Low-Side |
Independent |
2 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 30 V |
0.8V, 3V |
2A, 2A |
Non-Inverting |
- |
7.5ns, 6.5ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
6-VDFN Exposed Pad |
6-DFN (4x5) |
||
IXYS Integrated Circuits Division |
IC IGBT GATE DVR DUAL 16SOIC
|
Package: 16-SOIC (0.154", 3.90mm Width) |
Stock3,056 |
|
16-SOIC (0.154", 3.90mm Width) |
- |
Low-Side |
Independent |
2 |
IGBT |
-10 V ~ 25 V |
0.8V, 2V |
2A, 4A |
Non-Inverting |
- |
-, 8ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
16-SOIC (0.154", 3.90mm Width) |
16-SOIC |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO263-5
|
Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Stock19,368 |
|
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
9A, 9A |
Non-Inverting |
- |
22ns, 15ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
TO-263-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO220-5
|
Package: TO-220-5 Formed Leads |
Stock12,384 |
|
TO-220-5 Formed Leads |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
9A, 9A |
Non-Inverting |
- |
22ns, 15ns |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-5 Formed Leads |
TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO220-5
|
Package: TO-220-5 |
Stock4,816 |
|
TO-220-5 |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
9A, 9A |
Inverting |
- |
22ns, 15ns |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-220-5 |
TO-220-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO263-5
|
Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Stock7,872 |
|
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
9A, 9A |
Non-Inverting |
- |
22ns, 15ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
TO-263 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock6,528 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Independent |
2 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
4A, 4A |
Non-Inverting |
- |
9ns, 8ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock5,184 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Independent |
2 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
4A, 4A |
Inverting |
- |
9ns, 8ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,008 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Independent |
2 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
4A, 4A |
Inverting, Non-Inverting |
- |
9ns, 8ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,552 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Independent |
2 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
4A, 4A |
Non-Inverting |
- |
9ns, 8ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock7,664 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
9A, 9A |
Inverting |
- |
22ns, 15ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,824 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
9A, 9A |
Non-Inverting |
- |
22ns, 15ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock4,544 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
9A, 9A |
Inverting |
- |
22ns, 15ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock5,216 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
9A, 9A |
Non-Inverting |
- |
22ns, 15ns |
-55°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
IXYS Integrated Circuits Division |
IC GATE DRVR 600V HI/LO 14DIP
|
Package: 14-DIP (0.300", 7.62mm) |
Stock7,184 |
|
14-DIP (0.300", 7.62mm) |
- |
Half-Bridge |
Independent |
2 |
IGBT, N-Channel, P-Channel MOSFET |
10 V ~ 20 V |
6V, 9.5V |
2A, 2A |
Non-Inverting |
600V |
9.4ns, 9.7ns |
-40°C ~ 150°C (TJ) |
Through Hole |
14-DIP (0.300", 7.62mm) |
14-DIP |
||
IXYS Integrated Circuits Division |
IC GATE DVR HALF 600V 14DIP
|
Package: 14-DIP (0.300", 7.62mm) |
Stock7,808 |
|
14-DIP (0.300", 7.62mm) |
- |
Half-Bridge |
Synchronous |
2 |
IGBT, N-Channel MOSFET |
10 V ~ 20 V |
0.8V, 2V |
1.4A, 1.8A |
Non-Inverting |
600V |
23ns, 14ns |
-40°C ~ 150°C (TJ) |
Through Hole |
14-DIP (0.300", 7.62mm) |
14-DIP |
||
IXYS Integrated Circuits Division |
IC GATE DVR HIGH/LOW 600V 16SOIC
|
Package: 16-SOIC (0.295", 7.50mm Width) |
Stock2,176 |
|
16-SOIC (0.295", 7.50mm Width) |
- |
Half-Bridge |
Independent |
2 |
IGBT, N-Channel, P-Channel MOSFET |
10 V ~ 20 V |
6V, 9.5V |
2A, 2A |
Non-Inverting |
600V |
9.4ns, 9.7ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
16-SOIC (0.295", 7.50mm Width) |
16-SOIC |
||
IXYS Integrated Circuits Division |
14A 8 PIN DIP NON INVERTING
|
Package: 8-DIP (0.300", 7.62mm) |
Stock33,000 |
|
8-DIP (0.300", 7.62mm) |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Non-Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Through Hole |
8-DIP (0.300", 7.62mm) |
8-DIP |
||
IXYS Integrated Circuits Division |
14A 8 PIN DIP INVERTING
|
Package: 8-DIP (0.300", 7.62mm) |
Stock23,748 |
|
8-DIP (0.300", 7.62mm) |
- |
Low-Side |
Single |
1 |
IGBT, N-Channel, P-Channel MOSFET |
4.5 V ~ 35 V |
0.8V, 3V |
14A, 14A |
Inverting |
- |
25ns, 18ns |
-55°C ~ 150°C (TJ) |
Through Hole |
8-DIP (0.300", 7.62mm) |
8-DIP |
||
IXYS Integrated Circuits Division |
IC GATE DVR HALF 600V 14SOIC
|
Package: 14-SOIC (0.154", 3.90mm Width) |
Stock5,040 |
|
14-SOIC (0.154", 3.90mm Width) |
- |
Half-Bridge |
Synchronous |
2 |
IGBT, N-Channel MOSFET |
10 V ~ 20 V |
0.8V, 2V |
1.4A, 1.8A |
Non-Inverting |
600V |
23ns, 14ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
14-SOIC (0.154", 3.90mm Width) |
14-SOIC |
||
IXYS Integrated Circuits Division |
IC MOSFET/IGBT DVR 600V 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,888 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
High-Side |
Single |
1 |
IGBT, N-Channel MOSFET |
9 V ~ 12 V |
0.8V, 3V |
250mA, 500mA |
Non-Inverting |
600V |
23ns, 20ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |