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Part Number	Manufacturer	Description	Package	Stock	Package	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
HTNFET-D	Honeywell Microelectronics & Precision Sensors	MOSFET N-CH 55V 8-DIP	Package: 8-CDIP Exposed Pad	Stock4,192	8-CDIP Exposed Pad	HTMOS?	N-Channel	MOSFET (Metal Oxide)	55V	-	5V	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	10V	-	50W (Tj)	400 mOhm @ 100mA, 5V	-55°C ~ 225°C (TJ)	Through Hole	8-CDIP-EP	8-CDIP Exposed Pad
HTNFET-TC	Honeywell Microelectronics & Precision Sensors	MOSFET N-CH 55V 4-PIN	Package: -	Stock5,920	-	HTMOS?	N-Channel	MOSFET (Metal Oxide)	55V	-	5V	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	10V	-	50W (Tj)	400 mOhm @ 100mA, 5V	-	Through Hole	-	-
HTNFET-DC	Honeywell Microelectronics & Precision Sensors	MOSFET N-CH 55V 8-DIP	Package: 8-CDIP Exposed Pad	Stock2,496	8-CDIP Exposed Pad	HTMOS?	N-Channel	MOSFET (Metal Oxide)	55V	-	5V	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	10V	-	50W (Tj)	400 mOhm @ 100mA, 5V	-	Through Hole	-	8-CDIP Exposed Pad
HTNFET-T	Honeywell Microelectronics & Precision Sensors	MOSFET N-CH 55V 4-PIN	Package: 4-SIP	Stock6,464	4-SIP	HTMOS?	N-Channel	MOSFET (Metal Oxide)	55V	-	5V	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	10V	-	50W (Tj)	400 mOhm @ 100mA, 5V	-55°C ~ 225°C (TJ)	Through Hole	4-Power Tab	4-SIP

Transistors - FETs, MOSFETs - Single