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Transistors - FETs, MOSFETs - Single

Records 27
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Part Number
Manufacturer
Description
Package
Stock
Quantity
Package
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
GeneSiC Semiconductor
TRANS SJT 600V 100A
Package: TO-258-3, TO-258AA
Stock4,272
TO-258-3, TO-258AA
-
-
SiC (Silicon Carbide Junction Transistor)
600V
100A (Tc)
-
-
-
-
-
-
769W (Tc)
25 mOhm @ 50A
-55°C ~ 225°C (TJ)
Through Hole
TO-258
TO-258-3, TO-258AA
GeneSiC Semiconductor
TRANS SJT 650V 15A TO-257
Package: TO-257-3
Stock2,736
TO-257-3
-
-
SiC (Silicon Carbide Junction Transistor)
650V
15A (Tc) (155°C)
-
-
-
1534pF @ 35V
-
-
172W (Tc)
105 mOhm @ 15A
-55°C ~ 225°C (TJ)
Through Hole
TO-257
TO-257-3
GeneSiC Semiconductor
TRANS SJT 650V 16A TO276
Package: TO-276AA
Stock2,368
TO-276AA
-
-
SiC (Silicon Carbide Junction Transistor)
650V
16A (Tc) (155°C)
-
-
-
1534pF @ 35V
-
-
330W (Tc)
105 mOhm @ 16A
-55°C ~ 225°C (TJ)
Surface Mount
TO-276
TO-276AA
GeneSiC Semiconductor
TRANS SJT 650V 7A TO-257
Package: TO-257-3
Stock3,536
TO-257-3
-
-
SiC (Silicon Carbide Junction Transistor)
650V
7A (Tc) (165°C)
-
-
-
720pF @ 35V
-
-
80W (Tc)
170 mOhm @ 7A
-55°C ~ 225°C (TJ)
Through Hole
TO-257
TO-257-3
GeneSiC Semiconductor
TRANS SJT 650V 8A TO276
Package: TO-276AA
Stock5,328
TO-276AA
-
-
SiC (Silicon Carbide Junction Transistor)
650V
8A (Tc) (158°C)
-
-
-
720pF @ 35V
-
-
200W (Tc)
170 mOhm @ 8A
-55°C ~ 225°C (TJ)
Surface Mount
TO-276
TO-276AA
GeneSiC Semiconductor
TRANS SJT 650V 4A TO-257
Package: TO-257-3
Stock4,944
TO-257-3
-
-
SiC (Silicon Carbide Junction Transistor)
650V
4A (Tc) (165°C)
-
-
-
324pF @ 35V
-
-
47W (Tc)
415 mOhm @ 4A
-55°C ~ 225°C (TJ)
Through Hole
TO-257
TO-257-3
GeneSiC Semiconductor
TRANS SJT 650V 4A TO276
Package: TO-276AA
Stock6,816
TO-276AA
-
-
SiC (Silicon Carbide Junction Transistor)
650V
4A (Tc) (165°C)
-
-
-
324pF @ 35V
-
-
125W (Tc)
415 mOhm @ 4A
-55°C ~ 225°C (TJ)
Surface Mount
TO-276
TO-276AA
GeneSiC Semiconductor
TRANS SJT 1.7KV 100A
Package: TO-247-3
Stock6,864
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
100A (Tc)
-
-
-
-
-
-
583W (Tc)
25 mOhm @ 50A
175°C (TJ)
Through Hole
TO-247
TO-247-3
GeneSiC Semiconductor
TRANSISTOR 1200V 100A TO263-7
Package: -
Stock3,024
-
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GeneSiC Semiconductor
TRANS SJT 1700V 16A TO-247AB
Package: TO-247-3
Stock2,896
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
16A (Tc) (90°C)
-
-
-
-
-
-
282W (Tc)
110 mOhm @ 16A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1200V 45A TO247
Package: TO-247-3
Stock3,184
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
45A (Tc)
-
-
-
3091pF @ 800V
-
-
282W (Tc)
50 mOhm @ 20A
-55°C ~ 175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1.2KV 20A
Package: TO-247-3
Stock7,728
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
20A (Tc)
-
-
-
-
-
-
282W (Tc)
70 mOhm @ 20A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1200V 6A TO-247AB
Package: TO-247-3
Stock6,240
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
6A (Tc) (90°C)
-
-
-
-
-
-
-
220 mOhm @ 6A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1200V 5A
Package: TO-247-3
Stock4,432
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
5A (Tc)
-
-
-
-
-
-
106W (Tc)
280 mOhm @ 5A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1.2KV 10A
Package: TO-247-3
Stock3,248
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
10A (Tc)
-
-
-
-
-
-
170W (Tc)
140 mOhm @ 10A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1700V 160A SOT227
Package: SOT-227-4, miniBLOC
Stock2,064
SOT-227-4, miniBLOC
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
160A
-
-
-
14400pF @ 800V
-
-
535W (Tc)
10 mOhm @ 100A
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
GeneSiC Semiconductor
TRANS SJT 300V 9A
Package: TO-46-3
Stock6,768
TO-46-3
-
-
SiC (Silicon Carbide Junction Transistor)
300V
9A (Tc)
-
-
-
-
-
-
20W (Tc)
240 mOhm @ 5A
-55°C ~ 225°C (TJ)
Through Hole
TO-46
TO-46-3
GeneSiC Semiconductor
TRANS SJT 100V 9A
Package: TO-46-3
Stock6,804
TO-46-3
-
-
SiC (Silicon Carbide Junction Transistor)
100V
9A (Tc)
-
-
-
-
-
-
20W (Tc)
240 mOhm @ 5A
-55°C ~ 225°C (TJ)
Through Hole
TO-46
TO-46-3
GeneSiC Semiconductor
TRANS SJT 1700V 4A TO-247AB
Package: TO-247-3
Stock5,216
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
4A (Tc) (95°C)
-
-
-
-
-
-
106W (Tc)
480 mOhm @ 4A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1200V 160A SOT227
Package: SOT-227-4, miniBLOC
Stock6,432
SOT-227-4, miniBLOC
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
160A
-
-
-
14400pF @ 800V
-
-
535W (Tc)
10 mOhm @ 100A
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
GeneSiC Semiconductor
TRANS SJT 1200V 25A TO263-7
Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Stock8,640
TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
25A (Tc)
-
-
-
1403pF @ 800V
-
-
170W (Tc)
100 mOhm @ 10A
175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
GeneSiC Semiconductor
TRANS SJT 1200V 25A
Package: -
Stock18,264
-
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
25A (Tc)
-
-
-
1403pF @ 800V
-
-
170W (Tc)
120 mOhm @ 10A
175°C (TJ)
Surface Mount
-
-
GeneSiC Semiconductor
TRANS SJT 1200V 15A
Package: -
Stock21,036
-
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
15A (Tc)
-
-
-
-
-
-
106W (Tc)
-
175°C (TJ)
-
-
-
GeneSiC Semiconductor
TRANS SJT 1700V 8A TO-247AB
Package: TO-247-3
Stock19,104
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
8A (Tc) (90°C)
-
-
-
-
-
-
48W (Tc)
250 mOhm @ 8A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1200V 45A
Package: -
Stock7,776
-
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
45A (Tc)
-
-
-
3091pF @ 800V
-
-
282W (Tc)
60 mOhm @ 20A
175°C (TJ)
-
-
-
GeneSiC Semiconductor
TRANS SJT 1200V 3A TO-247AB
Package: TO-247-3
Stock7,620
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
3A (Tc) (95°C)
-
-
-
-
-
-
15W (Tc)
460 mOhm @ 3A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GeneSiC Semiconductor
TRANS SJT 1.2KV 50A
Package: TO-247-3
Stock6,160
TO-247-3
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
100A (Tc)
-
-
-
7209pF @ 800V
-
-
583W (Tc)
25 mOhm @ 50A
175°C (TJ)
Through Hole
TO-247AB
TO-247-3