* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
Driven Configuration |
Channel Type |
Number of Drivers |
Gate Type |
Voltage - Supply |
Logic Voltage - VIL, VIH |
Current - Peak Output (Source, Sink) |
Input Type |
High Side Voltage - Max (Bootstrap) |
Rise / Fall Time (Typ) |
Operating Temperature |
Mounting Type |
Package / Case |
Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
- |
IC DRIVER HALF-BRIDGE HV 10WSON
|
Package: 10-WDFN Exposed Pad |
Stock3,088 |
|
10-WDFN Exposed Pad |
- |
Half-Bridge |
Independent |
2 |
N-Channel MOSFET |
9 V ~ 14 V |
2.3V, - |
1A, 1A |
Non-Inverting |
118V |
990ns, 715ns |
-40°C ~ 125°C (TJ) |
Surface Mount |
10-WDFN Exposed Pad |
10-WSON (4x4) |
||
- |
IC DRIVER HALF-BRIDGE HV 10WSON
|
Package: 10-WDFN Exposed Pad |
Stock65,016 |
|
10-WDFN Exposed Pad |
- |
Half-Bridge |
Independent |
2 |
N-Channel MOSFET |
9 V ~ 14 V |
2.3V, - |
2A, 2A |
Non-Inverting |
118V |
570ns, 430ns |
-40°C ~ 125°C (TJ) |
Surface Mount |
10-WDFN Exposed Pad |
10-WSON (4x4) |
||
- |
IC DVR HALF-BRIDGE HV 10WSON
|
Package: 10-WDFN Exposed Pad |
Stock7,808 |
|
10-WDFN Exposed Pad |
- |
Half-Bridge |
Independent |
2 |
N-Channel MOSFET |
9 V ~ 14 V |
2.3V, - |
3A, 3A |
Non-Inverting |
118V |
430ns, 260ns |
-40°C ~ 125°C (TJ) |
Surface Mount |
10-WDFN Exposed Pad |
10-WSON (4x4) |
||
- |
IC MOSFET DVR SYNC 4.5A HS 8WSON
|
Package: 8-WDFN Exposed Pad |
Stock6,112 |
|
8-WDFN Exposed Pad |
- |
Half-Bridge |
Synchronous |
2 |
N-Channel MOSFET |
4 V ~ 6.85 V |
- |
3A, 4.5A |
Non-Inverting |
33V |
17ns, 12ns |
-40°C ~ 125°C (TJ) |
Surface Mount |
8-WDFN Exposed Pad |
8-WSON (4x4) |
||
Maxim Integrated |
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock5,664 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Half-Bridge |
Independent |
2 |
N-Channel MOSFET |
8 V ~ 12.6 V |
- |
2A, 2A |
Inverting, Non-Inverting |
175V |
65ns, 65ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
STMicroelectronics |
IC MOSFET DRIVER HI CURNT 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock73,284 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
Half-Bridge |
Synchronous |
2 |
N-Channel MOSFET |
5 V ~ 12 V |
0.8V, 2V |
2A, - |
Non-Inverting |
41V |
- |
0°C ~ 125°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
||
STMicroelectronics |
IC MOSFET DRIVER HI CURNT 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock33,156 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
Half-Bridge |
Synchronous |
2 |
N-Channel MOSFET |
5 V ~ 12 V |
1V, 2.3V |
2A, 2A |
Non-Inverting |
41V |
- |
0°C ~ 125°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SO |
||
Vishay Siliconix |
IC MOSFET DVR ADAPTIVE PWR 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,128 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
High-Side |
Single |
1 |
N-Channel MOSFET |
10.8 V ~ 16.5 V |
- |
1A, 1A |
Non-Inverting |
500V |
50ns, 35ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
||
- |
IC GATE DVR DUAL MOS 5A 8-EMSOP
|
Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Stock2,960 |
|
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
- |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
3.5 V ~ 14 V |
0.8V, 2.2V |
3A, 5A |
Inverting, Non-Inverting |
- |
14ns, 12ns |
-40°C ~ 125°C (TJ) |
Surface Mount |
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
8-MSOP-EP |
||
- |
IC GATE DRIVER DUAL MOS 5A 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,216 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
3.5 V ~ 14 V |
0.8V, 2.2V |
3A, 5A |
Inverting, Non-Inverting |
- |
14ns, 12ns |
-40°C ~ 125°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
||
Fairchild/ON Semiconductor |
IC MOSFET HALF BRIDGE DVR 16SOIC
|
Package: 16-SOIC (0.154", 3.90mm Width) |
Stock6,224 |
|
16-SOIC (0.154", 3.90mm Width) |
- |
Half-Bridge |
Synchronous |
4 |
N-Channel MOSFET |
10 V ~ 13.5 V |
0.8V, 2V |
- |
Non-Inverting |
- |
30ns, 25ns |
0°C ~ 125°C (TJ) |
Surface Mount |
16-SOIC (0.154", 3.90mm Width) |
16-SOIC |
||
Fairchild/ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,960 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
4.5 V ~ 18 V |
- |
3A, 3A |
Inverting, Non-Inverting |
- |
12ns, 9ns |
-40°C ~ 125°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
||
Fairchild/ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8MLP
|
Package: 8-WDFN Exposed Pad |
Stock2,160 |
|
8-WDFN Exposed Pad |
- |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
4.5 V ~ 18 V |
- |
3A, 3A |
Inverting, Non-Inverting |
- |
12ns, 9ns |
-40°C ~ 125°C (TJ) |
Surface Mount |
8-WDFN Exposed Pad |
8-MLP (3x3) |
||
ON Semiconductor |
IC PREDRIVER QUAD LOSIDE 32-LQFP
|
Package: 32-LQFP |
Stock31,680 |
|
32-LQFP |
Automotive, AEC-Q100, FLEXMOS? |
Low-Side |
Independent |
4 |
N-Channel MOSFET |
4.75 V ~ 5.25 V |
0.8V, 2V |
- |
Non-Inverting |
- |
1.4µs, 1.4µs (Max) |
-40°C ~ 150°C (TJ) |
Surface Mount |
32-LQFP |
32-LQFP (7x7) |
||
ON Semiconductor |
IC PREDRIVER QUAD LOSIDE 32-LQFP
|
Package: 32-LQFP |
Stock2,992 |
|
32-LQFP |
Automotive, AEC-Q100, FLEXMOS? |
Low-Side |
Independent |
4 |
N-Channel MOSFET |
4.75 V ~ 5.25 V |
0.8V, 2V |
- |
Non-Inverting |
- |
1.4µs, 1.4µs (Max) |
-40°C ~ 150°C (TJ) |
Surface Mount |
32-LQFP |
32-LQFP (7x7) |
||
ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8LFCSP
|
Package: 8-VFDFN Exposed Pad, CSP |
Stock3,600 |
|
8-VFDFN Exposed Pad, CSP |
- |
Half-Bridge |
Synchronous |
2 |
N-Channel MOSFET |
4.15 V ~ 13.2 V |
0.8V, 2V |
- |
Non-Inverting |
25V |
25ns, 20ns |
0°C ~ 150°C (TJ) |
Surface Mount |
8-VFDFN Exposed Pad, CSP |
8-LFCSP (3x3) |
||
Maxim Integrated |
IC MOSFET DRVR INV/NONINV 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,880 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
Low-Side |
Independent |
2 |
N-Channel, P-Channel MOSFET |
4.5 V ~ 18 V |
0.8V, 2.4V |
1.5A, 1.5A |
Inverting, Non-Inverting |
- |
20ns, 20ns |
0°C ~ 70°C (TA) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
||
Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,848 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
Low-Side |
Single |
1 |
N-Channel, P-Channel MOSFET |
4.5 V ~ 18 V |
0.8V, 2.4V |
6A, 6A |
Inverting |
- |
25ns, 25ns |
0°C ~ 70°C (TA) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
||
Maxim Integrated |
IC MOSFET DRVR DUAL INV 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock207,852 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
Low-Side |
Independent |
2 |
N-Channel, P-Channel MOSFET |
4.5 V ~ 18 V |
0.8V, 2.4V |
1.5A, 1.5A |
Inverting |
- |
20ns, 20ns |
-40°C ~ 85°C (TA) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
||
Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,760 |
|
8-SOIC (0.154", 3.90mm Width) |
- |
Low-Side |
Single |
1 |
N-Channel, P-Channel MOSFET |
4.5 V ~ 18 V |
0.8V, 2.4V |
6A, 6A |
Inverting |
- |
25ns, 25ns |
-40°C ~ 85°C (TA) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) |
8-SOIC |
||
Maxim Integrated |
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,728 |
|
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
- |
Half-Bridge |
Independent |
2 |
N-Channel MOSFET |
8 V ~ 12.6 V |
- |
3A, 3A |
Non-Inverting |
125V |
50ns, 40ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
8-SOIC (0.154", 3.90mm Width) Exposed Pad |
8-SOIC-EP |
||
Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock5,376 |
|
10-WFDFN Exposed Pad |
- |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
4.5 V ~ 28 V |
- |
2A, 4A |
Inverting, Non-Inverting |
- |
48ns, 32ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |
||
Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock7,104 |
|
10-WFDFN Exposed Pad |
Automotive, AEC-Q100 |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
6.5 V ~ 28 V |
2V, 4.25V |
2A, 4A |
Inverting, Non-Inverting |
- |
48ns, 32ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |
||
Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock3,472 |
|
10-WFDFN Exposed Pad |
- |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
6.5 V ~ 28 V |
- |
2A, 4A |
Inverting, Non-Inverting |
- |
48ns, 32ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |
||
Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock3,472 |
|
10-WFDFN Exposed Pad |
- |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
6.5 V ~ 28 V |
- |
2A, 4A |
Inverting, Non-Inverting |
- |
48ns, 32ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |
||
Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock3,824 |
|
10-WFDFN Exposed Pad |
- |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
4.5 V ~ 28 V |
- |
2A, 4A |
Inverting, Non-Inverting |
- |
48ns, 32ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |
||
Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock3,696 |
|
10-WFDFN Exposed Pad |
Automotive, AEC-Q100 |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
4.5 V ~ 28 V |
0.8V, 2V |
2A, 4A |
Inverting, Non-Inverting |
- |
42ns, 30ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |
||
Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock3,680 |
|
10-WFDFN Exposed Pad |
Automotive, AEC-Q100 |
Low-Side |
Independent |
2 |
N-Channel MOSFET |
6.5 V ~ 28 V |
2V, 4.25V |
2A, 4A |
Inverting, Non-Inverting |
- |
48ns, 32ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |
||
Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock5,632 |
|
10-WFDFN Exposed Pad |
Automotive, AEC-Q100 |
Low-Side |
Single |
1 |
N-Channel MOSFET |
6.5 V ~ 28 V |
2V, 4.25V |
4A, 8A |
Inverting, Non-Inverting |
- |
24ns, 16ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |
||
Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN
|
Package: 10-WFDFN Exposed Pad |
Stock3,648 |
|
10-WFDFN Exposed Pad |
- |
Low-Side |
Single |
1 |
N-Channel MOSFET |
4.5 V ~ 28 V |
- |
4A, 8A |
Inverting, Non-Inverting |
- |
24ns, 16ns |
-40°C ~ 150°C (TJ) |
Surface Mount |
10-WFDFN Exposed Pad |
10-TDFN-EP (3x3) |