Shanghai, China, May 27, 2025- Global renowned semiconductor manufacturer ROHM (headquartered in Kyoto, Japan) announced today the launch of an isolated gate driver IC "BM6GD11BFJ-LB" suitable for 600V high voltage GaN HEMT driving. By combining with this product, GaN devices can achieve more stable driving during high-frequency and high-speed switching processes, which helps to further reduce volume and improve efficiency in high current applications such as motors and server power supplies.

The new product is ROHM's first isolated gate driver IC for high voltage GaN HEMTs. In the switching operation of voltage fluctuations, using this product can isolate the device from the control circuit, ensuring safe signal transmission.

The new product utilizes ROHM's self-developed on-chip isolation technology to effectively reduce parasitic capacitance and achieve high-frequency driving up to 2MHz. By fully utilizing the high-speed switching characteristics of GaN devices, it not only helps to make application products more energy-efficient and achieve higher performance, but also reduces installation area by assisting in the miniaturization of peripheral components.

In addition, the immunity index of the isolated gate driver IC - Common Mode Transient Immunity (CMTI) * 1 reaches 150V/ns (nanoseconds), which is 1.5 times that of previous products. It can effectively prevent the troublesome high conversion rate induced misoperation during GaN HEMT switching, thereby helping the system achieve stable control. The minimum pulse width has been reduced by 33% compared to previous products, and the conduction time has been shortened to only 65ns. Therefore, although the frequency is higher, the minimum duty cycle can still be ensured, thereby controlling losses to a lower degree.

The gate driving voltage range of GaN devices is 4.5V to 6.0V, and the insulation withstand voltage is 2500Vrms. The new product can fully excite various high-voltage GaN devices (including ROHM EcoGaN)? The performance potential of the newly added 650V withstand voltage GaN HEMT "GNP2070TD-Z" in the series product lineup. The output current consumption is only 0.5mA (maximum), reaching the industry's ultra-low power consumption level, and it can also effectively reduce standby power consumption.

The new product has started mass production in March 2025 (sample price: 600 yen/piece, excluding tax). In addition, the new product has also started online sales and can be purchased through e-commerce platforms.

EcoGaNTM is a trademark or registered trademark of ROHM Co., Ltd.

<Development Background>

Against the backdrop of increasing global energy consumption year by year, energy-saving measures have become a common issue faced by countries around the world. Of particular note is that according to surveys, the electricity consumed by "motors" and "power sources" accounts for approximately 97% of the world's total electricity consumption. The key to improving the efficiency of "motors" and "power supplies" lies in the use of new materials such as silicon carbide (SiC) and gallium nitride (GaN) to manufacture a new generation of power devices responsible for power control and conversion.

ROHM fully leverages its technological advantages accumulated in the development of silicon semiconductor and SiC isolated gate driver ICs, successfully developing the first wave of products - isolated gate driver ICs optimized for GaN device driving. In the future, ROHM will provide gate driver ICs and GaN devices for GaN device driving, providing more convenience for the design of application products.

<Application Example>

Industrial equipment: power sources for photovoltaic inverters, ESS (energy storage systems), communication base stations, servers, industrial motors, etc

Consumer electronics: white goods, AC adapters (USB chargers), computers, televisions, refrigerators, air conditioners

<Terminology Explanation>

*1) Common mode transient immunity (CMTI)

One of the main parameters of an isolated gate driver refers to the product's ability to withstand sudden voltage changes that occur in a short period of time. Especially when driving devices with high conversion rates such as GaN HEMTs, sharp voltage changes are prone to occur. By using gate drivers with excellent CMTI performance, device damage can be effectively prevented and the risk of short circuits in the circuit can be reduced.

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