On February 20, 2025, Dalian University Holdings, a leading international semiconductor component distributor dedicated to the Asia Pacific market, announced that its subsidiary Quanding has launched a 48V/120A BMS solution based on InnoScience InnoGaN INV100FQ030C VGaN devices.

BMS (Battery Management System) is known as a battery nanny or battery manager, whose main function is to intelligently manage and maintain various battery units, monitor the operation status of batteries, prevent overcharging and overdischarging, and thus extend the service life of batteries. Currently, most battery management systems on the market adopt Si MOS design. Due to the parasitic diodes of Si MOS, they must be used in pairs to control the charge/discharge current. To overcome this limitation, DaDaDaDaDaDaDaDaQuan Ding has launched a 48V/120A BMS solution based on InnoGaN INV100FQ030C VGaN devices from InnoTech, which can replace two Si MOSFETs with one product, significantly reducing development costs and PCB footprint.

INV100FQ030C is a bidirectional conduction 100V silicon-based gallium nitride enhanced high electron mobility transistor developed by Innolux based on advanced VGaN technology. The product is packaged in a 4mm × 6mm FCQFN and supports bidirectional conduction and bidirectional cutoff. The on resistance is only 100V/3.2m Ω, and it has characteristics such as no reverse recovery and ultra-low gate charge. It is suitable for BMS management systems, high side load switches of bidirectional converters, switch circuits in power systems, and other applications.

In BMS applications, when the system needs to be charged or discharged normally, a 5V driving voltage can be applied between Gate-D1 or Gate-D2 to fully open VGaN, thereby achieving system charging or discharging. When the system requires charging protection or discharging protection, the Gate signal of VGaN can be actively connected to D1 or D2 to achieve charging or discharging shutdown of the system. At the same time, using the "body diode" characteristic of VGaN, the circuit can achieve charging protection after discharging or discharging protection after charging, thus realizing the design of replacing a pair of CHG and DSG MOS with one VGaN.

Under the same 100A load current, the traditional Si MOS series parallel BMS scheme requires up to 20 devices to achieve the required performance. By adopting a BMS solution based on VGaN devices, only 8 products are needed to meet the 100A temperature rise requirement, which not only reduces the number of devices by more than half, but also shows significant advantages in thermal performance.

Core technological advantages:

Small size: 65mm × 165mm, PCB occupies 40% less board area and PCB cost compared to Si MOS;

Compatibility: The current mainstream low side AFE is used for charge and discharge control, and a specially designed logic conversion circuit is compatible with the CHG/DSG control logic of the current Si scheme;

Good heat dissipation performance: Taking into account the packaging characteristics of VGaN, optimizing PCB layout to achieve optimal heat dissipation performance;

Bidirectional conduction: InnoSeco VGaN (INV100FQ030C) replaces multiple Si MOSFETs with one to reduce costs.

Scheme specifications:

Battery type: ternary lithium or lithium iron phosphate;

Number of battery strings: 16 strings;

Conventional discharge current: 100A (typical)/100A (heatsink);

Short circuit protection current: 200A.