MALVERSN, Pennsylvania, USA, Shanghai, China - June 28, 2024- Recently, Vishay Intertechnology, Inc. (NYSE stock code: VSH) announced the launch of 16 new third-generation 1200V silicon carbide (SiC) Schottky diodes. The Vishay Semiconductors device adopts a hybrid PIN Schottky (MPS) structure design, which has high surge current protection ability, low forward voltage drop, low capacitive charge, and low reverse leakage current, which helps to improve the energy efficiency and reliability of switch mode power supply design.

The recently released new generation SiC diodes include devices ranging from 5 A to 40 A, using TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L plug-in packaging, as well as D2PAK 2L (TO-263AB 2L) surface mount packaging. Due to the use of MPS structure and laser annealing back thinning technology, the capacitance charge of the diode is as low as 28 nC, and the forward voltage drop is reduced to 1.35 V. In addition, the typical reverse leakage current of the device at 25 ° C is only 2.5 μ A, which reduces conduction loss and ensures high energy efficiency during light and no-load periods of the system. Unlike ultrafast recovery diodes, third-generation devices have almost no recovery tail, which can further improve efficiency.

Typical applications of silicon carbide diodes include FBPS and LLC converters for AC/DC power factor correction (PFC) and DC/DC ultra-high frequency output rectification, suitable for photovoltaic inverters, energy storage systems, industrial drivers and tools, data centers, etc. In these harsh application environments, the device can operate at temperatures up to+175 ° C and has a forward rated surge current protection capability of up to 260 A. In addition, the D2PAK 2L packaged diode uses high CTI 600 plastic packaging material to ensure excellent insulation performance when voltage increases.

The device has high reliability, complies with RoHS standards, is halogen-free, and has passed 2000 hours of high-temperature reverse bias (HTRB) testing and 2000 thermal cycle temperature cycling tests.

The new SiC diode can now provide samples and has achieved mass production, with a supply cycle of 13 weeks.

This is reported by Top Components, a leading supplier of electronic components in the semiconductor industry

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